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ZXMS6004N8Q-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXMS6004N8Q-13

Diodes Incorporated · MOSFETs · SO-8

ZXMS6004N8Q-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the low-side IntelliFET, connected to ground in the load return path.
2 S passive Source of the low-side IntelliFET, tied to pin 1 and the other source pins.
3 S passive Source of the low-side IntelliFET, tied to pin 1 and the other source pins.
4 IN input Logic-level input with ESD protection; VIH 3 to 5.5 V turns the MOSFET on, VIL 0 to 0.7 V turns it off, and the continuous input voltage is -0.5 to +6 V.
5 D passive Drain of the 60 V self-protected MOSFET, connected to the load, with an active clamp of 60 to 70 V.
6 D passive Drain, tied to pin 5 and the other drain pins.
7 D passive Drain, tied to pin 5 and the other drain pins.
8 D passive Drain, tied to pin 5 and the other drain pins.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID = 10mA 3
Off State Drain Current IDSS 0.5 μA VDS = 12V, VIN = 0V 3
Off State Drain Current IDSS 1 μA VDS = 36V, VIN = 0V 3
Input Threshold Voltage VIN(TH) 0.7 1 1.5 V VDS = VGS, ID = 1mA 3
Input Current IIN 60 100 μA VIN = 3V 3
Input Current IIN 120 200 μA VIN = 5V 3
Input Current While Over-Temperature Active 400 μA VIN = 5V 3
Static Drain-Source On-State Resistance RDS(ON) 400 600 mΩ VIN = 3V, ID = 0.5A 3
Static Drain-Source On-State Resistance RDS(ON) 350 500 mΩ VIN = 5V, ID = 0.5A 3
Continuous Drain Current (Note 5) ID 0.9 A VIN = 3V, TA = +25°C 3
Continuous Drain Current (Note 5) ID 1 A VIN = 5V, TA = +25°C 3
Continuous Drain Current (Note 6) ID 1.2 A VIN = 3V, TA = +25°C 3
Continuous Drain Current (Note 6) ID 1.3 A VIN = 5V, TA = +25°C 3
Current Limit (Note 8) ID(LIM) 0.7 1.7 A VIN = 3V 3
Current Limit (Note 8) ID(LIM) 1 2.2 A VIN = 5V 3
Thermal Overload Trip Temperature (Note 9) TJT 150 175 °C 3
Turn On Delay Time tD(ON) 5 μs VDD = 12V, ID = 0.5A, VGS = 5V 3
Rise Time tR 10 μs VDD = 12V, ID = 0.5A, VGS = 5V 3
Turn Off Delay Time tD(OFF) 45 μs VDD = 12V, ID = 0.5A, VGS = 5V 3
Fall Time tF 15 μs VDD = 12V, ID = 0.5A, VGS = 5V 3
Thermal Hysteresis (Note 9) ΔTJT 10 °C 3
Input Voltage Range VIN 0 5.5 V 3
Ambient Temperature Range TA -40 125 °C 3
High Level Input Voltage for MOSFET to be on VIH 3 5.5 V 3
Low Level Input Voltage for MOSFET to be off VIL 0 0.7 V 3
Peripheral Supply Voltage VP 0 36 V voltage to which load is referred 3
Continuous Drain-Source Voltage VDS 60 V TA = +25°C 2
Drain-Source Voltage for Short Circuit Protection VDS(SC) 36 V TA = +25°C 2
Continuous Input Voltage VIN -0.5 6 V TA = +25°C 2
Continuous Input Current IIN 2 mA VIN < -0.2V or VIN > 6V 2
Pulsed Drain Current IDM 2 A VIN = 3.3V 2
Pulsed Drain Current IDM 2.5 A VIN = 5V 2
Continuous Source Current (Body Diode) IS 1 A Note 5 2
Pulsed Source Current (Body Diode) ISM 5 A 2
Unclamped Single Pulse Inductive Energy EAS 120 mJ TJ = +25°C, ID = 0.5A, VDD = 24V 2
Electrostatic Discharge (Human Body Model) VHBM 4000 V 2
Charged Device Model VCDM 1000 V 2
Power Dissipation (Note 5) PD 1.28 W TA = +25°C 2
Power Dissipation (Note 6) PD 1.65 W TA = +25°C 2
Operating Temperature Range TJ -40 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 98 °C/W 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 76 °C/W 2
Thermal Resistance, Junction to Case (Note 7) RθJC 12 °C/W 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Matte Tin Finish  Weight: 80.2mg (Approximate) 1

CAD (KiCad official)

  • Symbol: ZXMS6004N8Q-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxms6004n8q-13-etched.step / zxms6004n8q-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxms6004n8q-13.step / zxms6004n8q-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 3477964bd4e0b527, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF