component
ZXMP6A17K-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| zxmp6a17k-hxy-etched.glb | 6d ago |
| zxmp6a17k-hxy-etched.step | 6d ago |
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ZXMP6A17K-HXY
HXY MOSFET · MOSFETs · TO-252-2L
ZXMP6A17K-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate drive with VGS rated ±20 V and on-resistance specified at VGS=-10 V and -4.5 V. |
| 2 | D | passive | Drain, the exposed tab and the trimmed centre lead position; VDS rated -60 V and continuous ID -10 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current IS limited to -9.5 A with body diode VSD max -1.2 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 125 | 140 | mΩ | VGS=-10V, ID=-8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 168 | 210 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=150℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -9.5 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -24 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | -10 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -8.3 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -26 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 29.8 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-15A | 1 | ||
| Avalanche Current | IAS | -24.4 | A | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 31.3 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 inch2 FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | 1 inch2 FR-4 board, 2OZ copper | 1 | ||
| BVDSS Temperature Coefficient | △BVDSS/△T | -0.049 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 5.42 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 5.8 | S | VDS=-5V, ID=-5A | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 5.85 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 | ||
| Gate-Source Charge | Qgs | 2.9 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 | ||
| Gate-Drain Charge | Qgd | 1.8 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 2 | ||
| Turn-On Delay Time | Td(on) | 10 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Rise Time | Tr | 17 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Turn-Off Delay Time | Td(off) | 22 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Fall Time | Tf | 21 | ns | VDD=-12V, VGS=-10V, RG=3.3, ID=-5A | 2 | ||
| Input Capacitance | Ciss | 715 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 | ||
| Output Capacitance | Coss | 51 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 34 | pF | VDS=-15V, VGS=0V, F=1MHz | 2 | ||
| Reverse Recovery Time | trr | 10.2 | nS | IF=-8A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 5.4 | nC | IF=-8A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
ZXMP6A17K-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
zxmp6a17k-hxy-etched.step/zxmp6a17k-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmp6a17k-hxy.step/zxmp6a17k-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d64bc42aa1ca4eab, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).