component
ZXMP6A16DN8TA
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXMP6A16DN8TA
Diodes Incorporated · MOSFETs · SO-8
ZXMP6A16DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage limited to ±20V (±16V AEC-Q101). |
| 3 | S2 | passive | Source of P-channel MOSFET 2. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage limited to ±20V (±16V AEC-Q101). |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; VDSS -60V. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2; VDSS -60V. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; VDSS -60V. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1; VDSS -60V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID = -250µA, VGS = 0V | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60V, VGS = 0V | 4 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | -1 | V | ID = -250µA, VDS = VGS | 4 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 85 | mΩ | VGS = -10V, ID = -2.9A | 4 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 125 | mΩ | VGS = -4.5V, ID = -2.4A | 4 | ||
| Diode Forward Voltage | VSD | -0.85 | -0.95 | V | IS = -3.4A, VGS = 0V, TJ = +25°C | 4 | |
| Drain-Source Voltage | VDSS | -60 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGS | 20 | V | TA = +25°C; AEC-Q101 VGS maximum is 16V | 2 | ||
| Continuous Drain Current | ID | -3.9 | A | VGS = 10V, Notes 7 & 9 | 2 | ||
| Continuous Drain Current | ID | -3.1 | A | TA = +70°C, Notes 7 & 9 | 2 | ||
| Continuous Drain Current | ID | -2.9 | A | Notes 6 & 9 | 2 | ||
| Pulsed Drain Current | IDM | -18.3 | A | Notes 8 & 9 | 2 | ||
| Continuous Source Current (Body Diode) | IS | -3.2 | A | Notes 7 & 9 | 2 | ||
| Pulsed Source Current (Body Diode) | ISM | -18.3 | A | Notes 8 & 9 | 2 | ||
| Power Dissipation | PD | 1.25 | W | Notes 6 & 9 | 2 | ||
| Power Dissipation | PD | 1.81 | W | Notes 6 & 10 | 2 | ||
| Power Dissipation | PD | 2.15 | W | Notes 7 & 9 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 100 | °C/W | Notes 6 & 9 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 70 | °C/W | Notes 6 & 10 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 60 | °C/W | Notes 7 & 9 | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 48.85 | °C/W | Notes 9 & 11 | 2 | ||
| Forward Transconductance | gFS | 7.2 | S | VDS = -15V, ID = -2.9A | 4 | ||
| Reverse Recovery Time | tRR | 29.2 | ns | IS = -2A, di/dt = 100A/µs, TJ = +25°C | 4 | ||
| Reverse Recovery Charge | QRR | 39.6 | nC | IS = -2A, di/dt = 100A/µs, TJ = +25°C | 4 | ||
| Input Capacitance | CISS | 1021 | pF | VDS = -30V, VGS = 0V, f = 1MHz | 4 | ||
| Output Capacitance | COSS | 83.1 | pF | VDS = -30V, VGS = 0V, f = 1MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 56.4 | pF | VDS = -30V, VGS = 0V, f = 1MHz | 4 | ||
| Total Gate Charge | QG | 12.1 | nC | VGS = -5V, VDS = -30V, ID = -2.9A | 4 | ||
| Total Gate Charge | QG | 24.2 | nC | VGS = -10V, VDS = -30V, ID = -2.9A | 4 | ||
| Gate-Source Charge | QGS | 2.5 | nC | VGS = -10V, VDS = -30V, ID = -2.9A | 4 | ||
| Gate-Drain Charge | QGD | 3.7 | nC | VGS = -10V, VDS = -30V, ID = -2.9A | 4 | ||
| Turn-On Delay Time | tD(ON) | 3.5 | ns | VDD = -30V, VGS = -10V, ID = -1A, RG ≤ 6.0Ω | 4 | ||
| Turn-On Rise Time | tR | 4.1 | ns | VDD = -30V, VGS = -10V, ID = -1A, RG ≤ 6.0Ω | 4 | ||
| Turn-Off Delay Time | tD(OFF) | 35 | ns | VDD = -30V, VGS = -10V, ID = -1A, RG ≤ 6.0Ω | 4 | ||
| Turn-Off Fall Time | tF | 10 | ns | VDD = -30V, VGS = -10V, ID = -1A, RG ≤ 6.0Ω | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
ZXMP6A16DN8TA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxmp6a16dn8ta-etched.step/zxmp6a16dn8ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmp6a16dn8ta.step/zxmp6a16dn8ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
d228bb160a128fb9, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).