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ZXMP3A16DN8TA

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXMP3A16DN8TA

Diodes Incorporated · MOSFETs · SO-8

ZXMP3A16DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; body diode continuous current up to -3.2A.
2 G1 input Gate of P-channel MOSFET 1; VGS rated ±20V with threshold up to -1.0V (as printed).
3 S2 passive Source of P-channel MOSFET 2; body diode continuous current up to -3.2A.
4 G2 input Gate of P-channel MOSFET 2; VGS rated ±20V with threshold up to -1.0V (as printed).
5 D2 passive Drain of P-channel MOSFET 2; VDSS -30V, continuous ID up to -5.5A.
6 D2 passive Drain of P-channel MOSFET 2 (tied to pin 5); VDSS -30V, continuous ID up to -5.5A.
7 D1 passive Drain of P-channel MOSFET 1; VDSS -30V, continuous ID up to -5.5A.
8 D1 passive Drain of P-channel MOSFET 1 (tied to pin 7); VDSS -30V, continuous ID up to -5.5A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGS 20 V 2
Continuous Drain Current ID -5.5 A @VGS=10V; TA=25C (b)(d) 2
Continuous Drain Current ID -4.4 A @VGS=10V; TA=70C (b)(d) 2
Continuous Drain Current ID -4.2 A @VGS=10V; TA=25C (a)(d) 2
Pulsed Drain Current IDM -20 A (c) 2
Continuous Source Current (Body Diode) IS -3.2 A (b) 2
Pulsed Source Current (Body Diode) ISM -20 A (c) 2
Power Dissipation PD 1.25 W at TA=25°C (a)(d) 2
Power Dissipation PD 1.8 W at TA=25°C (a)(e) 2
Power Dissipation PD 2.1 W at TA=25°C (b)(d) 2
Operating and Storage Temperature Range Tj:Tstg -55 150 °C 2
Thermal Resistance Junction to Ambient RθJA 100 °C/W (a)(d) 2
Thermal Resistance Junction to Ambient RθJA 70 °C/W (b)(e) 2
Thermal Resistance Junction to Ambient RθJA 60 °C/W (b)(d) 2
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250μA, VGS=0V 4
Zero Gate Voltage Drain Current IDSS -1 A VDS=-30V, VGS=0V 4
Gate-Body Leakage IGSS 100 nA VGS=20V, VDS=0V 4
Gate-Source Threshold Voltage VGS(th) -1 V ID=-250A, VDS=VGS 4
Static Drain-Source On-State Resistance RDS(on) 0.045 Ω VGS=-10V, ID=-4.2A 4
Static Drain-Source On-State Resistance RDS(on) 0.07 Ω VGS=-4.5V, ID=-3.4A 4
Diode Forward Voltage VSD -0.85 -0.95 V TJ=25°C, IS=-3.6A, VGS=0V 4

CAD (KiCad official)

  • Symbol: ZXMP3A16DN8TA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxmp3a16dn8ta-etched.step / zxmp3a16dn8ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmp3a16dn8ta.step / zxmp3a16dn8ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 37295aedd316be16, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF