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ZXMN6A25GTA
Public Made by Adomby adom
UMW MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXMN6A25GTA
UMW · MOSFETs · SOT-223
ZXMN6A25GTA from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 60V N-channel MOSFET; gate-source voltage is rated at ±20 V (VGSS). |
| 2 | D | passive | DRAIN terminal of the MOSFET; drain-source voltage is rated at 60 V (VDSS) with continuous drain current of 6.7 A at TA=25°C (Note 6). |
| 3 | S | passive | SOURCE terminal of the MOSFET; the datasheet rates maximum body diode forward current at 5.7 A at TA=25°C (Note 5) and pulsed source current at 28.5 A (Note 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 3 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS=±20V, VGS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | V | VDS=VGS, ID=250µA | 3 | ||
| Diode Forward Voltage (Note 8) | VSD | 0.85 | 0.95 | V | VGS=0V, IS=5.5A | 3 | |
| Static Drain-Source On-Resistance (Note 8) at VGS=10V | RDS(ON) | 50 | mΩ | VGS=10V, ID=3.6A | 3 | ||
| Static Drain-Source On-Resistance (Note 8) at VGS=4.5V | RDS(ON) | 70 | mΩ | VGS=4.5V, ID=3A | 3 | ||
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TA=+25°C, Note 6) | ID | 6.7 | A | VGS=10V, TA=+25°C (Note 6) | 1 | ||
| Continuous Drain Current (TA=+70°C, Note 6) | ID | 5.4 | A | VGS=10V, TA=+70°C (Note 6) | 1 | ||
| Continuous Drain Current (TA=+25°C, Note 5, steady state) | ID | 4.8 | A | VGS=10V, TA=+25°C (Note 5) (Steady State) | 1 | ||
| Maximum Body Diode Forward Current (Note 6) | IS | 5.7 | A | 1 | |||
| Pulsed Drain Current (Note 7) | IDM | 28.5 | A | Note 7 | 1 | ||
| Pulsed Source Current (Note 7) | ISM | 28.5 | A | Note 7 | 1 | ||
| Total Power Dissipation (Note 5) | PD | 2 | W | TA=+25°C (Note 5) | 2 | ||
| Linear Derating Factor (Note 5) | 16 | mW/°C | TA=+25°C (Note 5) | 2 | |||
| Total Power Dissipation (Note 6) | PD | 3.9 | W | TA=+25°C (Note 6) | 2 | ||
| Linear Derating Factor (Note 6) | 31 | mW/°C | TA=+25°C (Note 6) | 2 | |||
| Thermal Resistance Junction to Ambient (Note 5) | RθJA | 62.5 | °C/W | Steady state (Note 5) | 2 | ||
| Thermal Resistance Junction to Ambient (Note 6) | RθJA | 32 | °C/W | Steady state (Note 6) | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
ZXMN6A25GTA - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
zxmn6a25gta-etched.step/zxmn6a25gta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmn6a25gta.step/zxmn6a25gta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
a035926fe1f2cd06, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXMN6A25GTA
**UMW** · MOSFETs · SOT-223
ZXMN6A25GTA from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 60V N-channel MOSFET; gate-source voltage is rated at ±20 V (VGSS). |
| 2 | D | passive | DRAIN terminal of the MOSFET; drain-source voltage is rated at 60 V (VDSS) with continuous drain current of 6.7 A at TA=25°C (Note 6). |
| 3 | S | passive | SOURCE terminal of the MOSFET; the datasheet rates maximum body diode forward current at 5.7 A at TA=25°C (Note 5) and pulsed source current at 28.5 A (Note 7). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 3 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS=±20V, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | | | V | VDS=VGS, ID=250µA | 3 |
| Diode Forward Voltage (Note 8) | VSD | | 0.85 | 0.95 | V | VGS=0V, IS=5.5A | 3 |
| Static Drain-Source On-Resistance (Note 8) at VGS=10V | RDS(ON) | | | 50 | mΩ | VGS=10V, ID=3.6A | 3 |
| Static Drain-Source On-Resistance (Note 8) at VGS=4.5V | RDS(ON) | | | 70 | mΩ | VGS=4.5V, ID=3A | 3 |
| Drain-Source Voltage | VDSS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (TA=+25°C, Note 6) | ID | | | 6.7 | A | VGS=10V, TA=+25°C (Note 6) | 1 |
| Continuous Drain Current (TA=+70°C, Note 6) | ID | | | 5.4 | A | VGS=10V, TA=+70°C (Note 6) | 1 |
| Continuous Drain Current (TA=+25°C, Note 5, steady state) | ID | | | 4.8 | A | VGS=10V, TA=+25°C (Note 5) (Steady State) | 1 |
| Maximum Body Diode Forward Current (Note 6) | IS | | | 5.7 | A | | 1 |
| Pulsed Drain Current (Note 7) | IDM | | | 28.5 | A | Note 7 | 1 |
| Pulsed Source Current (Note 7) | ISM | | | 28.5 | A | Note 7 | 1 |
| Total Power Dissipation (Note 5) | PD | | | 2 | W | TA=+25°C (Note 5) | 2 |
| Linear Derating Factor (Note 5) | | | | 16 | mW/°C | TA=+25°C (Note 5) | 2 |
| Total Power Dissipation (Note 6) | PD | | | 3.9 | W | TA=+25°C (Note 6) | 2 |
| Linear Derating Factor (Note 6) | | | | 31 | mW/°C | TA=+25°C (Note 6) | 2 |
| Thermal Resistance Junction to Ambient (Note 5) | RθJA | | | 62.5 | °C/W | Steady state (Note 5) | 2 |
| Thermal Resistance Junction to Ambient (Note 6) | RθJA | | | 32 | °C/W | Steady state (Note 6) | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `ZXMN6A25GTA`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `zxmn6a25gta-etched.step` / `zxmn6a25gta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxmn6a25gta.step` / `zxmn6a25gta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755887248296554496) (10 pp, sha256 `a035926fe1f2cd06`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxmn6a25gta-datasheet.pdf)