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ZXMN6A25DN8TA-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXMN6A25DN8TA-HXY

HXY MOSFET · MOSFETs · SOP-8

ZXMN6A25DN8TA-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel); VDS rating 60V, ID 5A.
2 G1 input Gate of MOSFET 1; VGS maximum ±20V, RDS(ON) <33mΩ at VGS=10V and <43mΩ at 4.5V.
3 S2 passive Source of MOSFET 2 (N-channel); VDS rating 60V, ID 5A.
4 G2 input Gate of MOSFET 2; VGS maximum ±20V, RDS(ON) <33mΩ at VGS=10V and <43mΩ at 4.5V.
5 D2 passive Drain of MOSFET 2; VDS rating 60V, ID 5A, pulsed IDM 20A.
6 D2 passive Drain of MOSFET 2, tied to pin 5; VDS rating 60V, ID 5A, pulsed IDM 20A.
7 D1 passive Drain of MOSFET 1; VDS rating 60V, ID 5A, pulsed IDM 20A.
8 D1 passive Drain of MOSFET 1, tied to pin 7; VDS rating 60V, ID 5A, pulsed IDM 20A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=60V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1.5 1.57 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 25 33 mΩ VGS=10V,ID=4A 2
Drain-Source On Resistance RDS(ON) 33 43 mΩ VGS=4.5V,ID=3A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ISD=1A 2
Continuous Drain Current (diode) IS 5 A VD=VG=0V 2
Pulsed Drain Current (diode) ISM 20 A VD=VG=0V 2
Drain-Source Voltage VDS 60 V Tj=25°C 1
Gate-Source Voltage VGS 20 V printed as +20 V; Tj=25°C 1
Drain Current ID@TA=25℃ 5 A VGS @ 4.5V 1
Drain Current ID@TA=100℃ 3.5 A VGS @ 4.5V 1
Pulsed Drain Current IDM 20 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 85 ℃/W 1
Input Capacitance Ciss 1027 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 60 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 45 pF VDS=15V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 3 ns VDS=30V, ID=4A, RENG=3.3Ω,VGS=10V 2
Rise Time tr 34 ns VDS=30V, ID=4A, RENG=3.3Ω,VGS=10V 2
Turn-Off Delay Time td(off) 23 ns VDS=30V, ID=4A, RENG=3.3Ω,VGS=10V 2
Fall Time tf 6 ns VDS=30V, ID=4A, RENG=3.3Ω,VGS=10V 2
Total Gate Charge Qg 19 nC VGS=10V, VDS=48V, ID=4A 2
Gate-Source Charge Qgs 2.6 nC VGS=10V, VDS=48V, ID=4A 2
Gate-Drain Miller Charge Qgd 4.1 nC VGS=10V, VDS=48V, ID=4A 2
Reverse Recovery Time Trr 12.1 ns IF=4A,TJ=25℃, dI/dt=100A/us 2
Reverse Recovery Charge Qrr 6.7 nC IF=4A,TJ=25℃, dI/dt=100A/us 2

CAD (KiCad official)

  • Symbol: ZXMN6A25DN8TA-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: zxmn6a25dn8ta-hxy-etched.step / zxmn6a25dn8ta-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn6a25dn8ta-hxy.step / zxmn6a25dn8ta-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 8420e5652d952d6b, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF