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ZXMN6A08K-HXY

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorzxmn6a08k-hxyfactory-2.0.0extractor-text

Verified ZXMN6A08K-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: ZXMN6A08K-HXY · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-i5ammqim/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ zxmn6a08k-hxy.kicad_sym✓ zxmn6a08k-hxy.kicad_mod✓ zxmn6a08k-hxy.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

ZXMN6A08K-HXY

HXY MOSFET · MOSFETs · TO-252-2L

ZXMN6A08K-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet rates gate-source voltage VGS at ±20 V absolute maximum.
2 D passive Drain terminal; the datasheet rates drain-source voltage VDS at 60 V and continuous drain current ID at 20 A at TC=25℃.
3 S passive Source terminal; the datasheet rates continuous source current IS at 20 A at TC=25℃.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 20 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 10 A VGS @ 10V 1
Pulsed Drain Current IDM 80 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 38 mJ VDD=25V, VGS=10V, L=0.4mH, IAS=14A 1
Total Power Dissipation PD@TC=25℃ 34.7 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V, TJ=25°C 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 60V, VGS = 0V, TJ=100°C 2
Gate-Threshold Voltage VGS(th) 1.2 1.7 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 25 32 mΩ VGS = 10V, ID = 10A 2
Drain-Source on-Resistance RDS(on) 31.5 40 mΩ VGS = 4.5V, ID = 5A 2
Diode Forward Voltage VSD 1.2 V IS = 10A, VGS = 0V 2
Forward Transconductance gfs 15.5 S VDS = 5V, ID = 10A 2
Input Capacitance Ciss 1355 pF VDS = 30V, VGS =0V, f =1MHz 2
Output Capacitance Coss 60 pF VDS = 30V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 49 pF VDS = 30V, VGS =0V, f =1MHz 2
Gate Resistance RG 1.2 Ω f =1MHz 2
Total Gate Charge Qg 22 nC VGS = 10V, VDD = 30V, ID= 10A 2
Gate-Source Charge Qgs 4.2 nC VGS = 10V, VDD = 30V, ID= 10A 2
Gate-Drain Charge Qgd 6.9 nC VGS = 10V, VDD = 30V, ID= 10A 2
Turn-on Delay Time td(on) 6.4 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Rise Time tr 15.3 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Turn-off Delay Time td(off) 25 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Fall Time tf 7.6 ns VGS =10V, VDD = 30V, RG = 3Ω, ID= 10A 2
Body Diode Reverse Recovery Time trr 26 ns IF=10A, dlF/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 45 nC IF=10A, dlF/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: ZXMN6A08K-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: zxmn6a08k-hxy-etched.step / zxmn6a08k-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn6a08k-hxy.step / zxmn6a08k-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 d34ed7d06706148a, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF