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Contents

README

markdown

ZXMN6A07ZTA-VB

VBsemi Elec · MOSFETs · SOT-89

ZXMN6A07ZTA-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V absolute maximum, with RDS(on) specified at VGS = 10 V (0.076 Ω) and 4.5 V (0.088 Ω).
2 D passive Drain, connected to the exposed tab; VDS rated 60 V, continuous ID 5.5 A at TC = 25 °C and pulsed IDM 20 A.
3 S passive Source; continuous source-drain body diode current 5.2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Maximum Power Dissipation, TA = 25 °C PD 2.5 W TA = 25 °C (note c) 1
Maximum Power Dissipation, TA = 70 °C PD 1.6 W TA = 70 °C (note c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Notes e, f 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 15 20 °C/W Steady State 1
Maximum Junction-to-Ambient RthJA 95 °C/W Steady State (note d) 1
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 2
Total Gate Charge Qg 22 33 nC VDS = 10 V, VGS = 10 V, ID = 6.3 A 2
Total Gate Charge Qg 10 15 nC VDS = 10 V, VGS = 4.5 V, ID = 6.3 A 2
Turn-on Delay Time td(on) 15 25 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 10 15 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 35 55 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 12 20 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-on Delay Time td(on) 10 15 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 12 20 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 25 40 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 10 V, RL = 1.5 Ω, ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.8 1.2 V IS = 6.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 20 40 ns IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 10 20 nC IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result 1

CAD (KiCad official)

  • Symbol: ZXMN6A07ZTA-VB
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: zxmn6a07zta-vb-etched.step / zxmn6a07zta-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn6a07zta-vb.step / zxmn6a07zta-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 fab61fdac83880eb, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF