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ZXMN3G32DN8TA

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXMN3G32DN8TA

Diodes Incorporated · MOSFETs · SO-8

ZXMN3G32DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1.
2 G1 input Gate of N-channel MOSFET 1, with VGS rated ±20 V and 4.5 V gate drive capability.
3 S2 passive Source of N-channel MOSFET 2.
4 G2 input Gate of N-channel MOSFET 2, with VGS rated ±20 V and 4.5 V gate drive capability.
5 D2 passive Drain of N-channel MOSFET 2, with VDSS rated 30 V; pins 5 and 6 are both D2.
6 D2 passive Drain of N-channel MOSFET 2, with VDSS rated 30 V; pins 5 and 6 are both D2.
7 D1 passive Drain of N-channel MOSFET 1, with VDSS rated 30 V; pins 7 and 8 are both D1.
8 D1 passive Drain of N-channel MOSFET 1, with VDSS rated 30 V; pins 7 and 8 are both D1.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain source voltage VDSS 30 V 2
Gate source voltage VGS -20 20 V 2
Continuous drain current ID 7.1 A VGS=10; TA=25°C(b) 2
Continuous drain current ID 5.7 A VGS=10; TA=70°C(b) 2
Continuous drain current ID 5.5 A VGS=10; TA=25°C(a) 2
Pulsed drain current IDM 33.6 A (c) 2
Continuous source current (body diode) IS 3.1 A (b) 2
Pulsed source current (body diode) ISM 33.6 A (c) 2
Power dissipation at TA=25°C PD 1.25 W (a)(d) 2
Power dissipation at TA=25°C PD 1.8 W (a)(e) 2
Power dissipation at TA=25°C PD 2.1 W (b)(d) 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Junction to ambient RJA 100 °C/W (a)(d) 2
Junction to ambient RJA 70 °C/W (a)(e) 2
Junction to ambient RJA 60 °C/W (b)(d) 2
Junction to lead RJL 51 °C/W (f) 2
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID=250µA, VGS=0V 4
Zero Gate Voltage Drain Current IDSS 0.5 µA VDS=30V, VGS=0V 4
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V 4
Gate-Source Threshold Voltage VGS(th) 1 3 V ID=250µA, VDS=VGS 4
Static Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS=10V, ID=6.0A (pulsed, pulse width ≤300µs; duty cycle ≤2%) 4
Static Drain-Source On-State Resistance RDS(on) 0.045 Ω VGS=4.5V, ID=4.9A (pulsed, pulse width ≤300µs; duty cycle ≤2%) 4
Forward Transconductance gfs 12 S VDS=15V, ID=6.0A 4
Diode Forward Voltage VSD 0.68 1.2 V Tj=25°C, IS=1.7A, VGS=0V 4

CAD (KiCad official)

  • Symbol: ZXMN3G32DN8TA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxmn3g32dn8ta-etched.step / zxmn3g32dn8ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn3g32dn8ta.step / zxmn3g32dn8ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 35d93b012af13f36, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF