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ZXMN2F30FHTA

Diodes Incorporated · MOSFETs · SOT-23

ZXMN2F30FHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±12 V absolute maximum, with 2.5 V gate drive capability and threshold of 0.6 to 1.5 V at ID=250 µA.
2 S passive Source; continuous body-diode source current is 1.6 A and pulsed source current is 22.6 A.
3 D passive Drain; VDSS is 20 V, continuous drain current is up to 4.9 A, and pulsed drain current is 22.6 A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V ID=250µA, VGS=0V 4
Zero gate voltage drain current IDSS 1 µA VDS=20V, VGS=0V 4
Gate-body leakage IGSS 100 nA VGS=±12V, VDS=0V 4
Gate-source threshold voltage VGS(th) 0.6 0.9 1.5 V ID=250µA, VDS=VGS 4
Static drain-source on-state resistance RDS(on) 0.045 Ω VGS=4.5V, ID=2.5A; pulsed, pulse width ≤300µs, duty cycle ≤2% 4
Static drain-source on-state resistance RDS(on) 0.065 Ω VGS=2.5V, ID=2.0A; pulsed, pulse width ≤300µs, duty cycle ≤2% 4
Forward transconductance gfs 8.6 S VDS=10V, ID=3A 4
Input capacitance Ciss 452 pF VDS=10V, VGS=0V, f=1MHz 4
Output capacitance Coss 102 pF VDS=10V, VGS=0V, f=1MHz 4
Reverse transfer capacitance Crss 58 pF VDS=10V, VGS=0V, f=1MHz 4
Turn-on delay time td(on) 2.9 ns VDD=10V, VGS=4.5V, ID=1A, RG≈6.0Ω 4
Rise time tr 5.6 ns VDD=10V, VGS=4.5V, ID=1A, RG≈6.0Ω 4
Turn-off delay time td(off) 19.4 ns VDD=10V, VGS=4.5V, ID=1A, RG≈6.0Ω 4
Fall time tf 10.2 ns VDD=10V, VGS=4.5V, ID=1A, RG≈6.0Ω 4
Total gate charge Qg 4.8 nC VDS=10V, VGS=4.5V, ID=3.5A 4
Gate-source charge Qgs 1 nC VDS=10V, VGS=4.5V, ID=3.5A 4
Gate-drain charge Qgd 1.2 nC VDS=10V, VGS=4.5V, ID=3.5A 4
Diode forward voltage VSD 0.75 1.2 V IS=1.25A, VGS=0V 4
Drain source voltage VDSS 20 V 2
Gate source voltage VGS -12 12 V printed as ±12 V 2
Continuous drain current ID 4.9 A VGS=4.5; TA=25°C (note b) 2
Continuous drain current ID 4 A VGS=4.5; TA=70°C (note b) 2
Continuous drain current ID 4.1 A VGS=4.5; TA=25°C (note a) 2
Pulsed drain current IDM 22.6 A note (c) 2
Continuous source current (body diode) IS 1.6 A note (b) 2
Pulsed source current (body diode) ISM 22.6 A note (c) 2
Power dissipation at TA=25°C PD 0.96 W TA=25°C (note a) 2
Linear derating factor PD 7.6 mW/°C note (a) 2
Power dissipation at TA=25°C PD 1.4 W TA=25°C (note b) 2
Linear derating factor PD 11.2 mW/°C note (b) 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Junction to ambient RJA 131 °C/W note (a): 25mm x 25mm FR4 PCB, still air 2
Junction to ambient RJA 89 °C/W note (b): FR4 PCB, t≤5 sec 2
Junction to lead RJL 68 °C/W note (d): junction to solder-point at end of drain lead 2

CAD (KiCad official)

  • Symbol: ZXMN2F30FHTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxmn2f30fhta-etched.step / zxmn2f30fhta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn2f30fhta.step / zxmn2f30fhta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 82191df98334ff5c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF