component
ZXMN2B14FHTA
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXMN2B14FHTA
Diodes Incorporated · MOSFETs · SOT-23
ZXMN2B14FHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; absolute maximum gate-source voltage is ±8 V and gate-source threshold voltage is 0.4 V min to 1.0 V max. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source current (body diode) is rated 2.4 A and pulsed source current 21 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 20 V (VDSS) with continuous drain current of 4.3 A at Tamb=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 20 | V | 2 | |||
| Gate-source voltage | VGS | -8 | 8 | V | 2 | ||
| Continuous drain current | ID | 4.3 | A | VGS= 4.5V; Tamb=25°C (b) | 2 | ||
| Continuous drain current | ID | 3.5 | A | VGS= 4.5V; Tamb=70°C (b) | 2 | ||
| Pulsed drain current | IDM | 21 | A | (c) | 2 | ||
| Continuous source current (body diode) | IS | 2.4 | A | (b) | 2 | ||
| Pulsed source current (body diode) | ISM | 21 | A | (c) | 2 | ||
| Power dissipation at Tamb=25°C | PD | 1 | W | (a) | 2 | ||
| Linear derating factor | 8 | mW/°C | (a) | 2 | |||
| Power dissipation at Tamb=25°C | PD | 1.5 | W | (b) | 2 | ||
| Linear derating factor | 12 | mW/°C | (b) | 2 | |||
| Operating and storage temperature range | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Junction to ambient | RJA | 125 | °C/W | (a) | 2 | ||
| Junction to ambient | RJA | 82 | °C/W | (b) | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | ID= 250A, VGS=0V | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | A | VDS= 20V, VGS=0V | 4 | ||
| Gate-body leakage | IGSS | 100 | nA | VGS=±8V, VDS=0V | 4 | ||
| Gate-source threshold voltage | VGS(th) | 0.4 | 1 | V | ID= 250A, VDS=VGS | 4 | |
| Static drain-source on-state resistance | RDS(on) | 0.055 | Ω | VGS= 4.5V, ID= 3.5A | 4 | ||
| Static drain-source on-state resistance | RDS(on) | 0.075 | Ω | VGS= 2.5V, ID= 3A | 4 | ||
| Static drain-source on-state resistance | RDS(on) | 0.1 | Ω | VGS= 1.8V, ID= 2.6A | 4 | ||
| Diode forward voltage | VSD | 0.69 | 0.95 | V | Tj=25°C, IS= 1.45A, VGS=0V | 4 |
CAD (KiCad official)
- Symbol:
ZXMN2B14FHTA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
zxmn2b14fhta-etched.step/zxmn2b14fhta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmn2b14fhta.step/zxmn2b14fhta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
ed38b0413b0b156d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXMN2B14FHTA
**Diodes Incorporated** · MOSFETs · SOT-23
ZXMN2B14FHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; absolute maximum gate-source voltage is ±8 V and gate-source threshold voltage is 0.4 V min to 1.0 V max. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous source current (body diode) is rated 2.4 A and pulsed source current 21 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 20 V (VDSS) with continuous drain current of 4.3 A at Tamb=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | | | 20 | V | | 2 |
| Gate-source voltage | VGS | -8 | | 8 | V | | 2 |
| Continuous drain current | ID | | | 4.3 | A | VGS= 4.5V; Tamb=25°C (b) | 2 |
| Continuous drain current | ID | | | 3.5 | A | VGS= 4.5V; Tamb=70°C (b) | 2 |
| Pulsed drain current | IDM | | | 21 | A | (c) | 2 |
| Continuous source current (body diode) | IS | | | 2.4 | A | (b) | 2 |
| Pulsed source current (body diode) | ISM | | | 21 | A | (c) | 2 |
| Power dissipation at Tamb=25°C | PD | | | 1 | W | (a) | 2 |
| Linear derating factor | | | | 8 | mW/°C | (a) | 2 |
| Power dissipation at Tamb=25°C | PD | | | 1.5 | W | (b) | 2 |
| Linear derating factor | | | | 12 | mW/°C | (b) | 2 |
| Operating and storage temperature range | Tj, Tstg | -55 | | 150 | °C | | 2 |
| Junction to ambient | RJA | | | 125 | °C/W | (a) | 2 |
| Junction to ambient | RJA | | | 82 | °C/W | (b) | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | ID= 250A, VGS=0V | 4 |
| Zero gate voltage drain current | IDSS | | | 1 | A | VDS= 20V, VGS=0V | 4 |
| Gate-body leakage | IGSS | | | 100 | nA | VGS=±8V, VDS=0V | 4 |
| Gate-source threshold voltage | VGS(th) | 0.4 | | 1 | V | ID= 250A, VDS=VGS | 4 |
| Static drain-source on-state resistance | RDS(on) | | | 0.055 | Ω | VGS= 4.5V, ID= 3.5A | 4 |
| Static drain-source on-state resistance | RDS(on) | | | 0.075 | Ω | VGS= 2.5V, ID= 3A | 4 |
| Static drain-source on-state resistance | RDS(on) | | | 0.1 | Ω | VGS= 1.8V, ID= 2.6A | 4 |
| Diode forward voltage | VSD | | 0.69 | 0.95 | V | Tj=25°C, IS= 1.45A, VGS=0V | 4 |
## CAD (KiCad official)
- Symbol: `ZXMN2B14FHTA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `zxmn2b14fhta-etched.step` / `zxmn2b14fhta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxmn2b14fhta.step` / `zxmn2b14fhta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586188266286145536) (8 pp, sha256 `ed38b0413b0b156d`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxmn2b14fhta-datasheet.pdf)