ZXMN10A09KTC-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS) and the gate threshold is specified at VDS = VGS, ID = 250 µA.
2	D	passive	Drain of the MOSFET, rated for a drain-source voltage of 100 V, with continuous drain current of 13 A at TC = 125 °C and a pulsed drain current of 40 A, and it is also the case/thermal connection (RthJC specified to the drain).
3	S	passive	Source of the MOSFET; the datasheet rates the continuous source current (diode conduction) at 3 A and the pulsed source current at 5 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			100	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			13	A	TC = 125 °C	1
Pulsed Drain Current	IDM			40	A		1
Continuous Source Current (Diode Conduction)	IS			3	A		1
Avalanche Current	IAS			3	A		1
Single Pulse Avalanche Energy	EAS			18	mJ	L = 0.1 mH	1
Maximum Power Dissipation	PD			96	W	TC = 25 °C	1
Maximum Power Dissipation	PD			3	W	TA = 25 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient thermal resistance	RthJA		15	18	°C/W	t, 10 s	1
Junction-to-Ambient thermal resistance	RthJA		40	50	°C/W	Steady State	1
Junction-to-Case (Drain) thermal resistance	RthJC		0.85	1.1	°C/W		1
Drain-Source Breakdown Voltage	VDS	100			V	VGS = 0 V, ID = 250 µA	2
Gate Threshold Voltage	VGS(th)	1		3.5	V	VDS = VGS, ID = 250 µA	2
Gate-Body Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 100 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			50	µA	VDS = 100 V, VGS = 0 V, TJ = 125 °C	2
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS = 100 V, VGS = 0 V, TJ = 175 °C	2
On-State Drain Current	ID(on)	40			A	VDS = 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.14	Ω	VGS = 10 V, ID = 3 A, TJ = 175 °C	2
Gate Resistance	Rg		0.5	2.9	Ω		2
Total Gate Charge	Qg		24	41	nC	VDS = 50 V, VGS = 10 V, ID = 3 A	2
Turn-On Delay Time	td(on)		15	25	ns	VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω	2
Rise Time	tr		50	75	ns	VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω	2
Turn-Off Delay Time	td(off)		30	45	ns	VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω	2
Fall Time	tf		60	90	ns	VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω	2
Pulsed Current	ISM			5	A	TC = 25 °C	2
Diode Forward Voltage	VSD		0.9	1.5	V	IF = 3 A, VGS = 0 V	2
Reverse Recovery Time	trr		180	250	ns	IF = 3 A, dI/dt = 100 A/µs	2

CAD (KiCad official)

Symbol: ZXMN10A09KTC-VB
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: zxmn10a09ktc-vb-etched.step / zxmn10a09ktc-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn10a09ktc-vb.step / zxmn10a09ktc-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 af6086a12a2ef25d, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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ZXMN10A09KTC-VB

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