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ZXMN10A08DN8TA

Diodes Incorporated · MOSFETs · SO-8

ZXMN10A08DN8TA from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, pin 1 at the dotted corner in the top-view pin configuration.
2 S passive Source terminal of the N-channel MOSFET, connected in parallel with the other source pins.
3 S passive Source terminal of the N-channel MOSFET, connected in parallel with the other source pins.
4 G input Gate terminal of the N-channel MOSFET, with VGS rated at ±20V maximum.
5 D passive Drain terminal of the N-channel MOSFET, with VDSS rated at 100V.
6 D passive Drain terminal of the N-channel MOSFET, connected in parallel with the other drain pins.
7 D passive Drain terminal of the N-channel MOSFET, connected in parallel with the other drain pins.
8 D passive Drain terminal of the N-channel MOSFET, connected in parallel with the other drain pins.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 2.1 A VGS = 10V, TA = +25°C (Note 5) 2
Continuous Drain Current ID 1.7 A VGS = 10V, TA = +70°C (Note 5) 2
Continuous Drain Current ID 1.6 A VGS = 10V, TA = +25°C (Note 6) 2
Pulsed Drain Current IDM 9 A (Note 7) 2
Continuous Source Current (Body Diode) IS 2.6 A (Note 5) 2
Pulsed Source Current (Body Diode) ISM 9 A (Note 7) 2
Power Dissipation at TA = +25°C PD 1.25 W (Note 6) 2
Power Dissipation at TA = +25°C PD 1.8 W (Note 5) 2
Drain-Source Voltage VDSS 100 V 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Junction to Ambient RθJA 100 °C/W (Note 6) 2
Junction to Ambient RθJA 69 °C/W (Note 5) 2
Drain-Source Breakdown Voltage BVDSS 100 V ID = 250µA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 100V, VGS = 0V 2
Gate-Body Leakage IGSS 100 nA VGS = ±20V, VDS = 0V 2
Gate-Source Threshold Voltage VGS(th) 2 V ID = 250µA, VDS = VGS 2
Static Drain-Source On-State Resistance RDS(on) 0.25 Ω VGS = 10V, ID = 3.2A 2
Static Drain-Source On-State Resistance RDS(on) 0.3 Ω VGS = 6V, ID = 2.6A 2
Diode Forward Voltage VSD 0.87 0.95 V TJ = +25°C, IS = 3.2A, VGS = 0V 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See Diagram  Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: ZXMN10A08DN8TA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxmn10a08dn8ta-etched.step / zxmn10a08dn8ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmn10a08dn8ta.step / zxmn10a08dn8ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 9b153c3d7e8412d7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF