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ZXMHC6A07T8TA-VB
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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownZXMHC6A07T8TA-VB
VBsemi Elec · MOSFETs · SO-8
ZXMHC6A07T8TA-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60 V VDS, 5.3 A ID at TC = 25 °C). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with a VGS limit of ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60 V VDS, -4.9 A ID at TC = 25 °C). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with a VGS limit of ±20 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, internally common with pin 6 (-60 V VDS). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, internally common with pin 5 (-60 V VDS). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, internally common with pin 8 (60 V VDS). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, internally common with pin 7 (60 V VDS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage, N-Channel | VDS | 60 | V | N-Channel | 1 | ||
| Drain-Source Voltage, P-Channel | VDS | -60 | V | P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, N-Channel | ID | 5.3 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current, P-Channel | ID | -4.9 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current, N-Channel | ID | 4.3 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current, P-Channel | ID | -4.2 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current, P-Channel | ID | -4 | A | TA = 25 °C (surface mounted, note b,c) | 1 | ||
| Pulsed Drain Current, N-Channel | IDM | 20 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current, P-Channel | IDM | -25 | A | 10 µs pulse width | 1 | ||
| Source Drain Diode Current, N-Channel | IS | 2.6 | A | TC = 25 °C | 1 | ||
| Source Drain Diode Current, P-Channel | IS | -2.8 | A | TC = 25 °C | 1 | ||
| Pulsed Source-Drain Current, N-Channel | ISM | 20 | A | 1 | |||
| Pulsed Source-Drain Current, P-Channel | ISM | -25 | A | 1 | |||
| Single Pulse Avalanche Current, N-Channel | IAS | 11 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current, P-Channel | IAS | 15 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy, N-Channel | EAS | 6.1 | mJ | 1 | |||
| Single Pulse Avalanche Energy, P-Channel | EAS | 11 | mJ | 1 | |||
| Maximum Power Dissipation, N-Channel | PD | 3.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, P-Channel | PD | 3.4 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient, N-Channel | RthJA | 55 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient, P-Channel | RthJA | 53 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain), N-Channel | RthJF | 33 | 40 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Foot (Drain), P-Channel | RthJF | 30 | 37 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Ambient, N and P-Channel (note d) | RthJA | 110 | °C/W | Steady state | 1 | ||
| Drain-Source Breakdown Voltage, N-Channel | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage, P-Channel | VDS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage, N-Channel | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage, P-Channel | VGS(th) | -3 | -1 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage, N-Channel | IGSS | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Gate-Body Leakage, P-Channel | IGSS | -100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Zero Gate Voltage Drain Current, N-Channel | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, P-Channel | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| On-State Drain Current, N-Channel | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current, P-Channel | ID(on) | -25 | A | VDS ≤ -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance, N-Channel | RDS(on) | 0.029 | Ω | VGS = 4.5 V, ID = 3.9 A | 2 | ||
| Drain-Source On-State Resistance, P-Channel | RDS(on) | 0.055 | Ω | VGS = -10 V, ID = -3.1 A | 2 | ||
| Drain-Source On-State Resistance, P-Channel | RDS(on) | 0.06 | Ω | VGS = -4.5 V, ID = -0.2 A | 2 | ||
| Body Diode Voltage, N-Channel | VSD | 0.8 | 1.2 | V | IS = 1.7 A | 3 | |
| Body Diode Voltage, P-Channel | VSD | -1.2 | -0.8 | V | IS = -2 A | 3 | |
| Total Gate Charge, N-Channel | Qg | 13 | 20 | nC | VDS = 30 V, VGS = 10 V, ID = 4.3 A | 2 | |
| Total Gate Charge, P-Channel | Qg | 14.5 | 22 | nC | VDS = -30 V, VGS = -10 V, ID = -3.1 A | 2 | |
| Total Gate Charge, N-Channel | Qg | 6 | 9 | nC | VDS = 30 V, VGS = 4.5 V, ID = 4.3 A | 2 | |
| Total Gate Charge, P-Channel | Qg | 8 | 12 | nC | VDS = -30 V, VGS = -4.5 V, ID = -3.1 A | 2 | |
| Turn-On Delay Time, N-Channel | td(on) | 15 | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time, P-Channel | td(on) | 30 | 45 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Rise Time, N-Channel | tr | 65 | 100 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Rise Time, P-Channel | tr | 70 | 105 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time, N-Channel | td(off) | 15 | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time, P-Channel | td(off) | 40 | 60 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Fall Time, N-Channel | tf | 10 | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Fall Time, P-Channel | tf | 30 | 45 | ns | VDD = -30 V, RL = 12.5 Ω, ID ≅ -2.4 A, VGEN = -4.5 V, Rg = 1 Ω | 3 | |
| Body Diode Reverse Recovery Time, N-Channel | trr | 30 | 60 | ns | IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time, P-Channel | trr | 30 | 50 | ns | IF = -2 A, dI/dt = -100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge, N-Channel | Qrr | 32 | 50 | nC | 3 | ||
| Body Diode Reverse Recovery Charge, P-Channel | Qrr | 35 | 60 | nC | 3 |
CAD (KiCad official)
- Symbol:
ZXMHC6A07T8TA-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxmhc6a07t8ta-vb-etched.step/zxmhc6a07t8ta-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmhc6a07t8ta-vb.step/zxmhc6a07t8ta-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
4596c76eae54607f, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).