component
ZXMHC3F381N8TC
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZXMHC3F381N8TC
Diodes Incorporated · MOSFETs · SO-8
ZXMHC3F381N8TC from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N1G | input | Gate of N-channel MOSFET N1 (low-side), rated VGS ±20V with 4.5V gate drive supported. |
| 2 | N1D/P1D | passive | Common drain of N1 and P1 forming the first half-bridge output, rated 30V N-channel and -30V P-channel VDSS. |
| 3 | N1S/N2S | passive | Common source of both N-channel MOSFETs N1 and N2, the low-side (ground) rail of the H-bridge. |
| 4 | N2G | input | Gate of N-channel MOSFET N2 (low-side), rated VGS ±20V. |
| 5 | P2G | input | Gate of P-channel MOSFET P2 (high-side), rated VGS ±20V. |
| 6 | N2D/P2D | passive | Common drain of N2 and P2 forming the second half-bridge output, rated 30V N-channel and -30V P-channel VDSS. |
| 7 | P1S/P2S | passive | Common source of both P-channel MOSFETs P1 and P2, the high-side supply rail of the H-bridge. |
| 8 | P1G | input | Gate of P-channel MOSFET P1 (high-side), rated VGS ±20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage, N-channel | VDSS | 30 | V | 2 | |||
| Drain-Source voltage, P-channel | VDSS | -30 | V | 2 | |||
| Gate-Source voltage, N-channel | VGS | -20 | 20 | V | 2 | ||
| Gate-Source voltage, P-channel | VGS | -20 | 20 | V | 2 | ||
| Continuous drain current, N-channel | ID | 4.98 | A | VGS=10V; TA=25°C (b) | 2 | ||
| Continuous drain current, N-channel | ID | 3.98 | A | VGS=10V; TA=70°C (b) | 2 | ||
| Continuous drain current, N-channel | ID | 4.17 | A | VGS=10V; TL=25°C (f) | 2 | ||
| Continuous drain current, P-channel | ID | -4.13 | A | VGS=10V; TA=25°C (b) | 2 | ||
| Continuous drain current, P-channel | ID | -3.31 | A | VGS=10V; TA=70°C (b) | 2 | ||
| Continuous drain current, P-channel | ID | -3.36 | A | VGS=10V; TA=25°C (a) | 2 | ||
| Continuous drain current, P-channel | ID | -3.51 | A | VGS=10V; TL=25°C (f) | 2 | ||
| Pulsed drain current, N-channel | IDM | 22.9 | A | VGS=10V; TA=25°C (c) | 2 | ||
| Pulsed drain current, P-channel | IDM | -19.6 | A | VGS=10V; TA=25°C (c) | 2 | ||
| Continuous source current (body diode), N-channel | IS | 2 | A | TA=25°C (b) | 2 | ||
| Continuous source current (body diode), P-channel | IS | -2 | A | TA=25°C (b) | 2 | ||
| Pulsed source current (body diode), N-channel | ISM | 22.9 | A | TA=25°C (c) | 2 | ||
| Pulsed source current (body diode), P-channel | ISM | -19.6 | A | TA=25°C (c) | 2 | ||
| Power dissipation | PD | 0.87 | W | TA=25°C (a) | 2 | ||
| Power dissipation | PD | 1.35 | W | TA=25°C (b) | 2 | ||
| Power dissipation (first printed value) | PD | 0.95 | W | TL=25°C (f) | 2 | ||
| Power dissipation (second printed value) | PD | 0.98 | W | TL=25°C (f) | 2 | ||
| Operating and storage temperature range | Tj, Tstg | -55 | 150 | °C | 2 | ||
| N-channel electrical: Drain-Source breakdown voltage | V(BR)DSS | 30 | V | ID = 250μA, VGS= 0V | 4 | ||
| N-channel electrical: Zero gate voltage drain current | IDSS | 0.5 | µA | VDS= 30V, VGS= 0V | 4 | ||
| N-channel electrical: Gate-body leakage | IGSS | -100 | 100 | nA | VGS= ±20V, VDS= 0V | 4 | |
| N-channel electrical: Gate-source threshold voltage | VGS(th) | 1 | 3 | V | ID= 250μA, VDS= VGS | 4 | |
| N-channel electrical: Static drain-source on-state resistance | RDS(on) | 0.033 | Ω | VGS= 10V, ID= 5A | 4 | ||
| N-channel electrical: Static drain-source on-state resistance | RDS(on) | 0.06 | Ω | VGS= 4.5V, ID= 4A | 4 | ||
| N-channel electrical: Diode forward voltage | VSD | 0.82 | 1.2 | V | IS= 1.7A, VGS= 0V | 4 | |
| P-channel electrical: Drain-Source breakdown voltage | V(BR)DSS | -30 | V | ID = -250μA, VGS= 0V | 7 | ||
| P-channel electrical: Zero gate voltage drain current | IDSS | -0.5 | µA | VDS= -30V, VGS= 0V | 7 | ||
| P-channel electrical: Gate-body leakage | IGSS | -100 | 100 | nA | VGS= ±20V, VDS= 0V | 7 | |
| P-channel electrical: Gate-source threshold voltage | VGS(th) | -3 | -1 | V | ID= -250μA, VDS= VGS | 7 | |
| P-channel electrical: Static drain-source on-state resistance | RDS(on) | 0.055 | Ω | VGS= -10V, ID= -5A | 7 | ||
| P-channel electrical: Static drain-source on-state resistance | RDS(on) | 0.08 | Ω | VGS= -4.5V, ID= -4A | 7 | ||
| P-channel electrical: Diode forward voltage | VSD | -1.2 | -0.82 | V | IS= -1.7A, VGS= 0V | 7 | |
| Junction to ambient (a) | RθJA | 144 | °C/W | note (a): 25x25mm FR4, steady state, one active die | 2 | ||
| Junction to ambient (b) | RθJA | 92 | °C/W | note (b): as (a), t ≤ 10 s | 2 | ||
| Junction to ambient (d) | RθJA | 106 | °C/W | note (d): 50x50mm FR4, 2oz copper, steady state | 2 | ||
| Junction to ambient (e) | RθJA | 254 | °C/W | note (e): minimum copper FR4, steady state | 2 | ||
| Junction to lead (first printed value) | RθJL | 131 | °C/W | note (f): junction to solder-point | 2 | ||
| Junction to lead (second printed value) | RθJL | 128 | °C/W | note (f): junction to solder-point | 2 | ||
| N-channel electrical: Forward transconductance | gfs | 11.8 | S | VDS= 15V, ID= 5A | 4 | ||
| N-channel electrical: Input capacitance | Ciss | 430 | pF | VDS= 15V, VGS= 0V, f= 1MHz | 4 | ||
| N-channel electrical: Output capacitance | Coss | 101 | pF | VDS= 15V, VGS= 0V, f= 1MHz | 4 | ||
| N-channel electrical: Reverse transfer capacitance | Crss | 56 | pF | VDS= 15V, VGS= 0V, f= 1MHz | 4 | ||
| N-channel electrical: Total gate charge | Qg | 9 | nC | VDS=15V, VGS= 10V, ID= 5A | 4 | ||
| N-channel electrical: Reverse recovery time | trr | 12 | ns | IS= 2.1A, di/dt= 100A/μs | 4 | ||
| P-channel electrical: Forward transconductance | gfs | 14 | S | VDS= -15V, ID= -5A | 7 | ||
| P-channel electrical: Input capacitance | Ciss | 670 | pF | VDS= -15V, VGS= 0V, f= 1MHz | 7 | ||
| P-channel electrical: Output capacitance | Coss | 126 | pF | VDS= -15V, VGS= 0V, f= 1MHz | 7 | ||
| P-channel electrical: Reverse transfer capacitance | Crss | 70 | pF | VDS= -15V, VGS= 0V, f= 1MHz | 7 | ||
| P-channel electrical: Total gate charge | Qg | 12.7 | nC | VDS= -15V, VGS= -10V, ID= -5A | 7 | ||
| P-channel electrical: Reverse recovery time | trr | 16.5 | ns | IS= -2.1A, di/dt= 100A/μs | 7 |
CAD (KiCad official)
- Symbol:
ZXMHC3F381N8TC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxmhc3f381n8tc-etched.step/zxmhc3f381n8tc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmhc3f381n8tc.step/zxmhc3f381n8tc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (11 pp, sha256
eec216541414589e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZXMHC3F381N8TC
**Diodes Incorporated** · MOSFETs · SO-8
ZXMHC3F381N8TC from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N1G | input | Gate of N-channel MOSFET N1 (low-side), rated VGS ±20V with 4.5V gate drive supported. |
| 2 | N1D/P1D | passive | Common drain of N1 and P1 forming the first half-bridge output, rated 30V N-channel and -30V P-channel VDSS. |
| 3 | N1S/N2S | passive | Common source of both N-channel MOSFETs N1 and N2, the low-side (ground) rail of the H-bridge. |
| 4 | N2G | input | Gate of N-channel MOSFET N2 (low-side), rated VGS ±20V. |
| 5 | P2G | input | Gate of P-channel MOSFET P2 (high-side), rated VGS ±20V. |
| 6 | N2D/P2D | passive | Common drain of N2 and P2 forming the second half-bridge output, rated 30V N-channel and -30V P-channel VDSS. |
| 7 | P1S/P2S | passive | Common source of both P-channel MOSFETs P1 and P2, the high-side supply rail of the H-bridge. |
| 8 | P1G | input | Gate of P-channel MOSFET P1 (high-side), rated VGS ±20V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage, N-channel | VDSS | | | 30 | V | | 2 |
| Drain-Source voltage, P-channel | VDSS | -30 | | | V | | 2 |
| Gate-Source voltage, N-channel | VGS | -20 | | 20 | V | | 2 |
| Gate-Source voltage, P-channel | VGS | -20 | | 20 | V | | 2 |
| Continuous drain current, N-channel | ID | | | 4.98 | A | VGS=10V; TA=25°C (b) | 2 |
| Continuous drain current, N-channel | ID | | | 3.98 | A | VGS=10V; TA=70°C (b) | 2 |
| Continuous drain current, N-channel | ID | | | 4.17 | A | VGS=10V; TL=25°C (f) | 2 |
| Continuous drain current, P-channel | ID | -4.13 | | | A | VGS=10V; TA=25°C (b) | 2 |
| Continuous drain current, P-channel | ID | -3.31 | | | A | VGS=10V; TA=70°C (b) | 2 |
| Continuous drain current, P-channel | ID | -3.36 | | | A | VGS=10V; TA=25°C (a) | 2 |
| Continuous drain current, P-channel | ID | -3.51 | | | A | VGS=10V; TL=25°C (f) | 2 |
| Pulsed drain current, N-channel | IDM | | | 22.9 | A | VGS=10V; TA=25°C (c) | 2 |
| Pulsed drain current, P-channel | IDM | -19.6 | | | A | VGS=10V; TA=25°C (c) | 2 |
| Continuous source current (body diode), N-channel | IS | | | 2 | A | TA=25°C (b) | 2 |
| Continuous source current (body diode), P-channel | IS | -2 | | | A | TA=25°C (b) | 2 |
| Pulsed source current (body diode), N-channel | ISM | | | 22.9 | A | TA=25°C (c) | 2 |
| Pulsed source current (body diode), P-channel | ISM | -19.6 | | | A | TA=25°C (c) | 2 |
| Power dissipation | PD | | | 0.87 | W | TA=25°C (a) | 2 |
| Power dissipation | PD | | | 1.35 | W | TA=25°C (b) | 2 |
| Power dissipation (first printed value) | PD | | | 0.95 | W | TL=25°C (f) | 2 |
| Power dissipation (second printed value) | PD | | | 0.98 | W | TL=25°C (f) | 2 |
| Operating and storage temperature range | Tj, Tstg | -55 | | 150 | °C | | 2 |
| N-channel electrical: Drain-Source breakdown voltage | V(BR)DSS | 30 | | | V | ID = 250μA, VGS= 0V | 4 |
| N-channel electrical: Zero gate voltage drain current | IDSS | | | 0.5 | µA | VDS= 30V, VGS= 0V | 4 |
| N-channel electrical: Gate-body leakage | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS= 0V | 4 |
| N-channel electrical: Gate-source threshold voltage | VGS(th) | 1 | | 3 | V | ID= 250μA, VDS= VGS | 4 |
| N-channel electrical: Static drain-source on-state resistance | RDS(on) | | | 0.033 | Ω | VGS= 10V, ID= 5A | 4 |
| N-channel electrical: Static drain-source on-state resistance | RDS(on) | | | 0.06 | Ω | VGS= 4.5V, ID= 4A | 4 |
| N-channel electrical: Diode forward voltage | VSD | | 0.82 | 1.2 | V | IS= 1.7A, VGS= 0V | 4 |
| P-channel electrical: Drain-Source breakdown voltage | V(BR)DSS | -30 | | | V | ID = -250μA, VGS= 0V | 7 |
| P-channel electrical: Zero gate voltage drain current | IDSS | -0.5 | | | µA | VDS= -30V, VGS= 0V | 7 |
| P-channel electrical: Gate-body leakage | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS= 0V | 7 |
| P-channel electrical: Gate-source threshold voltage | VGS(th) | -3 | | -1 | V | ID= -250μA, VDS= VGS | 7 |
| P-channel electrical: Static drain-source on-state resistance | RDS(on) | | | 0.055 | Ω | VGS= -10V, ID= -5A | 7 |
| P-channel electrical: Static drain-source on-state resistance | RDS(on) | | | 0.08 | Ω | VGS= -4.5V, ID= -4A | 7 |
| P-channel electrical: Diode forward voltage | VSD | -1.2 | -0.82 | | V | IS= -1.7A, VGS= 0V | 7 |
| Junction to ambient (a) | RθJA | | 144 | | °C/W | note (a): 25x25mm FR4, steady state, one active die | 2 |
| Junction to ambient (b) | RθJA | | 92 | | °C/W | note (b): as (a), t ≤ 10 s | 2 |
| Junction to ambient (d) | RθJA | | 106 | | °C/W | note (d): 50x50mm FR4, 2oz copper, steady state | 2 |
| Junction to ambient (e) | RθJA | | 254 | | °C/W | note (e): minimum copper FR4, steady state | 2 |
| Junction to lead (first printed value) | RθJL | | 131 | | °C/W | note (f): junction to solder-point | 2 |
| Junction to lead (second printed value) | RθJL | | 128 | | °C/W | note (f): junction to solder-point | 2 |
| N-channel electrical: Forward transconductance | gfs | | 11.8 | | S | VDS= 15V, ID= 5A | 4 |
| N-channel electrical: Input capacitance | Ciss | | 430 | | pF | VDS= 15V, VGS= 0V, f= 1MHz | 4 |
| N-channel electrical: Output capacitance | Coss | | 101 | | pF | VDS= 15V, VGS= 0V, f= 1MHz | 4 |
| N-channel electrical: Reverse transfer capacitance | Crss | | 56 | | pF | VDS= 15V, VGS= 0V, f= 1MHz | 4 |
| N-channel electrical: Total gate charge | Qg | | 9 | | nC | VDS=15V, VGS= 10V, ID= 5A | 4 |
| N-channel electrical: Reverse recovery time | trr | | 12 | | ns | IS= 2.1A, di/dt= 100A/μs | 4 |
| P-channel electrical: Forward transconductance | gfs | | 14 | | S | VDS= -15V, ID= -5A | 7 |
| P-channel electrical: Input capacitance | Ciss | | 670 | | pF | VDS= -15V, VGS= 0V, f= 1MHz | 7 |
| P-channel electrical: Output capacitance | Coss | | 126 | | pF | VDS= -15V, VGS= 0V, f= 1MHz | 7 |
| P-channel electrical: Reverse transfer capacitance | Crss | | 70 | | pF | VDS= -15V, VGS= 0V, f= 1MHz | 7 |
| P-channel electrical: Total gate charge | Qg | | 12.7 | | nC | VDS= -15V, VGS= -10V, ID= -5A | 7 |
| P-channel electrical: Reverse recovery time | trr | | 16.5 | | ns | IS= -2.1A, di/dt= 100A/μs | 7 |
## CAD (KiCad official)
- Symbol: `ZXMHC3F381N8TC`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `zxmhc3f381n8tc-etched.step` / `zxmhc3f381n8tc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxmhc3f381n8tc.step` / `zxmhc3f381n8tc.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586196358919565312) (11 pp, sha256 `eec216541414589e`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zxmhc3f381n8tc-datasheet.pdf)