component
ZXMHC3A01T8TA
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-223-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXMHC3A01T8TA
Diodes Incorporated · MOSFETs · SOT-223-8
ZXMHC3A01T8TA from Diodes Incorporated, in a SOT-223-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G3 | input | Gate of MOSFET 3, with VGSS rated ±20V. |
| 2 | S2/S3 | passive | Common source pin of MOSFETs 2 and 3, tied together internally. |
| 3 | G2 | input | Gate of MOSFET 2, with VGSS rated ±20V. |
| 4 | G1 | input | Gate of MOSFET 1, with VGSS rated ±20V. |
| 5 | D1/D2 | passive | Common drain pin of MOSFETs 1 and 2, tied together internally and forming one H-bridge output. |
| 6 | S1/S4 | passive | Common source pin of MOSFETs 1 and 4, tied together internally. |
| 7 | D3/D4 | passive | Common drain pin of MOSFETs 3 and 4, tied together internally and forming the other H-bridge output. |
| 8 | G4 | input | Gate of MOSFET 4, with VGSS rated ±20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-223-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-channel Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| P-channel Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| N-channel Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| P-channel Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| N-channel Continuous Drain Current, steady state, TA=+25°C | ID | 3.1 | A | VGS = 10V, TA = +25°C (Notes 6 & 8) | 2 | ||
| N-channel Continuous Drain Current, steady state, TA=+70°C | ID | 2.5 | A | VGS = 10V, TA = +70°C (Notes 6 & 8) | 2 | ||
| N-channel Continuous Drain Current, TA=+25°C | ID | 2.7 | A | VGS = 10V, TA = +25°C (Notes 5 & 8) | 2 | ||
| P-channel Continuous Drain Current, steady state, TA=+25°C | ID | -2.3 | A | VGS = 10V, TA = +25°C (Notes 6 & 8) | 2 | ||
| P-channel Continuous Drain Current, steady state, TA=+70°C | ID | -1.8 | A | VGS = 10V, TA = +70°C (Notes 6 & 8) | 2 | ||
| P-channel Continuous Drain Current, TA=+25°C | ID | -2 | A | VGS = 10V, TA = +25°C (Notes 5 & 8) | 2 | ||
| N-channel Continuous Source Current (body diode) | IS | 2.3 | A | Note 6 | 2 | ||
| P-channel Continuous Source Current (body diode) | IS | -2.2 | A | Note 6 | 2 | ||
| N-channel Pulsed Drain Current | IDM | 14.3 | A | Note 7 | 2 | ||
| P-channel Pulsed Drain Current | IDM | -10.8 | A | Note 7 | 2 | ||
| N-channel Pulsed Source Current | ISM | 14.5 | A | Note 7 | 2 | ||
| P-channel Pulsed Source Current | ISM | -10.8 | A | Note 7 | 2 | ||
| Total Power Dissipation | PD | 1.3 | W | TA = +25°C (Note 5) | 2 | ||
| Total Power Dissipation | PD | 1.7 | W | TA = +25°C (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 96 | °C/W | Steady State (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 73 | °C/W | Steady State (Note 6) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| N-channel Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 3 | ||
| N-channel Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 30V, VGS = 0V | 3 | ||
| N-channel Gate-Source Leakage | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 3 | ||
| N-channel Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250μA | 3 | |
| N-channel Static Drain-Source On-Resistance (Note 9) | RDS(ON) | 0.12 | Ω | VGS = 10V, ID = 2.5A | 3 | ||
| N-channel Static Drain-Source On-Resistance (Note 9) | RDS(ON) | 0.18 | Ω | VGS = 4.5V, ID = 2.0A | 3 | ||
| N-channel Diode Forward Voltage (Note 9) | VSD | 0.95 | V | VGS = 0V, IS = 1.7A | 3 | ||
| P-channel Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250μA | 3 | ||
| P-channel Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 3 | ||
| P-channel Gate-Source Leakage | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 3 | ||
| P-channel Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250μA | 3 | |
| P-channel Static Drain-Source On-Resistance (Note 9) | RDS(ON) | 0.21 | Ω | VGS = -10V, ID = -1.4A | 3 | ||
| P-channel Static Drain-Source On-Resistance (Note 9) | RDS(ON) | 0.33 | Ω | VGS = -4.5V, ID = -1.1A | 3 | ||
| P-channel Diode Forward Voltage (Note 9) | VSD | -0.85 | -0.95 | V | VGS = 0V, IS = -1.1A | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe; | 1 |
CAD (KiCad official)
- Symbol:
ZXMHC3A01T8TA - Footprint:
Package_TO_SOT_SMD:SOT-223-8 - 3D model: SOT-223-8 (KiCad packages3D, STEP)
- 3D model files:
zxmhc3a01t8ta-etched.step/zxmhc3a01t8ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmhc3a01t8ta.step/zxmhc3a01t8ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
b9c363e989ea5551, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).