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ZVP3306A
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Diodes Incorporated MOSFETs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZVP3306A
Diodes Incorporated · MOSFETs · TO-92
ZVP3306A from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel DMOS FET; VDS max -60 V, continuous ID -160 mA, pulsed IDM -1.6 A. |
| 2 | G | input | Gate; VGS max ±20 V, threshold VGS(th) -1.5 V to -3.5 V at ID=-1 mA. |
| 3 | S | passive | Source of the P-channel DMOS FET; RDS(on) max 14 Ω at VGS=-10 V, ID=-200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID=-1mA, VGS=0V | 1 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -3.5 | V | ID=-1mA, VDS= VGS | 1 | |
| Gate-Body Leakage | IGSS | 20 | nA | VGS=± 20V, VDS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -0.5 | µA | VDS=-60 V, VGS=0 | 1 | ||
| Zero Gate Voltage Drain Current at 125°C | IDSS | -50 | µA | VDS=-48 V, VGS=0V, T=125°C(2) | 1 | ||
| On-State Drain Current | ID(on) | -400 | mA | VDS=-18 V, VGS=-10V | 1 | ||
| Static Drain-Source On-State Resistance | RDS(on) | 14 | Ω | VGS=-10V,ID=-200mA | 1 | ||
| Forward Transconductance | gfs | 60 | mS | VDS=-18V,ID=-200mA | 1 | ||
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Continuous Drain Current at Tamb=25°C | ID | -160 | mA | Tamb=25°C | 1 | ||
| Pulsed Drain Current | IDM | -1.6 | A | 1 | |||
| Gate Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation at Tamb=25°C | Ptot | 625 | mW | Tamb=25°C | 1 | ||
| Operating and Storage Temperature Range | Tj:Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
ZVP3306A - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
zvp3306a-etched.step/zvp3306a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zvp3306a.step/zvp3306a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (3 pp, sha256
7f3e89fb0b711e9b, retrieved 2026-10-16, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZVP3306A
**Diodes Incorporated** · MOSFETs · TO-92
ZVP3306A from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel DMOS FET; VDS max -60 V, continuous ID -160 mA, pulsed IDM -1.6 A. |
| 2 | G | input | Gate; VGS max ±20 V, threshold VGS(th) -1.5 V to -3.5 V at ID=-1 mA. |
| 3 | S | passive | Source of the P-channel DMOS FET; RDS(on) max 14 Ω at VGS=-10 V, ID=-200 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | ID=-1mA, VGS=0V | 1 |
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | | -3.5 | V | ID=-1mA, VDS= VGS | 1 |
| Gate-Body Leakage | IGSS | | | 20 | nA | VGS=± 20V, VDS=0V | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | -0.5 | µA | VDS=-60 V, VGS=0 | 1 |
| Zero Gate Voltage Drain Current at 125°C | IDSS | | | -50 | µA | VDS=-48 V, VGS=0V, T=125°C(2) | 1 |
| On-State Drain Current | ID(on) | -400 | | | mA | VDS=-18 V, VGS=-10V | 1 |
| Static Drain-Source On-State Resistance | RDS(on) | | | 14 | Ω | VGS=-10V,ID=-200mA | 1 |
| Forward Transconductance | gfs | 60 | | | mS | VDS=-18V,ID=-200mA | 1 |
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Continuous Drain Current at Tamb=25°C | ID | -160 | | | mA | Tamb=25°C | 1 |
| Pulsed Drain Current | IDM | -1.6 | | | A | | 1 |
| Gate Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Power Dissipation at Tamb=25°C | Ptot | | | 625 | mW | Tamb=25°C | 1 |
| Operating and Storage Temperature Range | Tj:Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `ZVP3306A`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `zvp3306a-etched.step` / `zvp3306a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zvp3306a.step` / `zvp3306a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/ZVP3306A.pdf) (3 pp, sha256 `7f3e89fb0b711e9b`, retrieved 2026-10-16, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/zvp3306a-datasheet.pdf)