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Contents

README

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ZVN4525E6TA

Diodes Incorporated · MOSFETs · SOT-26

ZVN4525E6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, tied to the other drain pins (2, 5, 6); VDSS 250V max, continuous ID 230mA at TA=+25°C.
2 D passive Drain, tied to the other drain pins (1, 5, 6); VDSS 250V max, continuous ID 230mA at TA=+25°C.
3 G input Gate; VGS max ±40V, threshold VGS(th) 0.8V min to 1.8V max at ID=1mA.
4 S passive Source; body diode continuous source current IS 1.1A max.
5 D passive Drain, tied to the other drain pins (1, 2, 6); VDSS 250V max, RDS(ON) 8.5Ω max at VGS=10V.
6 D passive Drain, tied to the other drain pins (1, 2, 5); VDSS 250V max, RDS(ON) 8.5Ω max at VGS=10V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
BVDSS Drain-Source Breakdown Voltage BVDSS 250 285 V ID = 1mA, VGS = 0 3
Gate-Source Threshold Voltage VGS(th) 0.8 1.4 1.8 V ID = 1mA, VDS = VGS 3
Forward Transconductance gfs 0.3 0.475 S VDS = 10V, ID = 0.3A 3
Diode Forward Voltage VSD 0.97 V TJ = +25°C, IS = 360mA, VGS = 0 3
Zero Gate Voltage Drain Current IDSS 35 500 nA VDS = 250V, VGS = 0 3
Gate-Body Leakage IGSS 100 nA VGS = 40V, VDS = 0 3
Static Drain-Source On-State Resistance RDS(ON) 5.6 8.5 Ω VGS = 10V, ID = 500mA 3
Static Drain-Source On-State Resistance RDS(ON) 5.9 9 Ω VGS = 4.5V, ID = 360mA 3
Static Drain-Source On-State Resistance RDS(ON) 6.4 9.5 Ω VGS = 2.4V, ID = 20mA 3
Total Gate Charge Qg 2.6 3.65 nC VGS = 10V, VDS = 25V, ID = 360mA 3
Gate-Source Charge Qgs 0.2 0.28 nC VGS = 10V, VDS = 25V, ID = 360mA 3
Gate-Drain Charge Qgd 0.5 0.7 nC VGS = 10V, VDS = 25V, ID = 360mA 3
Reverse-Recovery Time trr 186 260 ns TJ = +25°C, IF = 360A, di/dt = 100A/μs 3
Reverse-Recovery Charge Qrr 34 48 nC TJ = +25°C, IF = 360A, di/dt = 100A/μs 3
Drain-Source Voltage VDSS 250 V 2
Gate-Source Voltage VGS 40 V 2
Continuous Drain Current ID 230 mA VGS = 10V, TA = +25°C (Note 5) 2
Continuous Drain Current ID 183 mA VGS = 10V, TA = +70°C (Note 5) 2
Pulsed Drain Current IDM 1.44 A Note 7 2
Continuous Source Current (Body Diode) IS 1.1 A 2
Pulsed Source Current (Body Diode) ISM 1.44 A 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation at TA = +25°C PD 1.1 W TA = +25°C (Note 5) 2
Linear Derating Factor PD 8.8 mW/°C 2
Junction to Ambient RJA 113 °C/W Note 5 (25mm x 25mm FR4, 1oz copper, still air) 2
Junction to Ambient RJA 65 °C/W Note 6 (surface mounted on FR4, t ≤ 5 secs) 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminals: Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: ZVN4525E6TA
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: zvn4525e6ta-etched.step / zvn4525e6ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zvn4525e6ta.step / zvn4525e6ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 08ba54d8e7c0ea5e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF