component

ZTX792ASTZ

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZTX792ASTZ

Diodes Incorporated · Bipolar Transistors - BJT · TO-92

ZTX792ASTZ from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector; VCEO -70 V, VCBO -75 V, continuous current -2 A, peak pulse current -4 A.
2 B passive Base; emitter-base voltage limit VEBO -5 V.
3 E passive Emitter; PNP device, emitter-base breakdown -5 V at IE=-100µA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-92
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -75 V 1
Collector-Emitter Voltage VCEO -70 V 1
Emitter-Base Voltage VEBO -5 V 1
Peak Pulse Current ICM -4 A 1
Continuous Collector Current IC -2 A 1
Practical Power Dissipation Ptotp 1.5 W Mounted on P.C.B. with copper equal to 1 inch square minimum 1
Power Dissipation Ptot 1 W Tamb=25°C 1
Power Dissipation derating above 25°C Ptot 5.7 mW/°C derate above 25°C 1
Operating and Storage Temperature Range Tj:Tstg -55 200 °C 1
Collector-Base Breakdown Voltage V(BR)CBO -75 V IC=-100µA 1
Collector-Emitter Breakdown Voltage V(BR)CEO -70 V IC=-10mA* 1
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA 1
Collector Cut-Off Current ICBO -0.1 µA VCB=-40V 1
Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V 1
Collector-Emitter Saturation Voltage VCE(sat) -0.45 V IC=-500mA, IB=-5mA* 1
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-1A, IB=-25mA* 1
Base-Emitter Saturation Voltage VBE(sat) -0.95 V IC=-1A, IB=-25mA* 1
Base-Emitter Turn-On Voltage VBE(on) -0.75 V IC=-1A, VCE=-2V* 1
Static Forward Current Transfer Ratio hFE 300 800 IC=-10mA, VCE=-2V* 1
Static Forward Current Transfer Ratio hFE 250 IC=-500mA, VCE=-2V* 1
Static Forward Current Transfer Ratio hFE 200 IC=-1A, VCE=-2V* 1
Transition Frequency fT 100 MHz IC=-50mA, VCE=-5V, f=50MHz 1
Input Capacitance Cibo 225 pF VEB=-0.5V, f=1MHz 1
Output Capacitance Cobo 22 pF VCB=-10V, f=1MHz 1
Turn-On Time ton 35 ns IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V 1
Turn-Off Time toff 750 ns IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V 1
Thermal Resistance Junction to Ambient 1 Rth(j-amb)1 175 °C/W 1
Thermal Resistance Junction to Ambient 2 Rth(j-amb)2 116 °C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum 1
Thermal Resistance Junction to Case Rth(j-case) 70 °C/W 1

CAD (KiCad official)

  • Symbol: ZTX792ASTZ
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: ztx792astz-etched.step / ztx792astz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ztx792astz.step / ztx792astz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (3 pp, sha256 30eea049e5f516ef, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF