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ZTX758

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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ZTX758

Diodes Incorporated · Bipolar Transistors - BJT · TO-92

ZTX758 from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector of the PNP transistor, rated VCEO -400V with continuous collector current IC -0.5A and peak pulse current ICM -1A.
2 B passive Base of the transistor, with emitter-base voltage rating VEBO -7V.
3 E passive Emitter of the transistor, with emitter-base breakdown voltage BVEBO -7V at IE = -100µA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -400 V 2
Collector-Emitter Voltage VCEO -400 V 2
Emitter-Base Voltage VEBO -7 V 2
Continuous Collector Current IC -0.5 A 2
Peak Pulse Current ICM -1 A 2
Power Dissipation PD 1.5 W Note 5 2
Power Dissipation PD 1 W Note 6 2
Thermal Resistance Junction to Ambient RθJA 116 °C/W Note 5 2
Thermal Resistance Junction to Ambient RθJA 175 °C/W Note 6 2
Thermal Resistance Junction to Lead RθJL 70 °C/W Note 7 2
Operating and Storage Temperature Range TJ, TSTG -55 200 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C 2
Collector-Base Breakdown Voltage BVCBO -400 V IC = -100µA 4
Collector-Emitter Breakdown Voltage BVCEO -400 V IC = -1mA 4
Emitter-Base Breakdown Voltage BVEBO -7 V IE = -100µA 4
Collector Cutoff Current ICBO -100 nA VCB = -320V 4
Emitter Cutoff Current IEBO -100 nA VEB = -6V 4
Collector-Emitter Saturation Voltage VCE(sat) -300 mV IC = -20mA, IB = -1mA 4
Collector-Emitter Saturation Voltage VCE(sat) -250 mV IC = -50mA, IB = -5mA 4
Collector-Emitter Saturation Voltage VCE(sat) -500 mV IC = -100mA, IB = -10mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100mA, IB = -100mA 4
Base-Emitter Turn-On Voltage VBE(on) -0.9 V IC = -100mA, VCE = -5V 4
DC Current Gain hFE 50 IC = -1mA, VCE = -5V 4
DC Current Gain hFE 40 IC = -200mA, VCE = -10V 4
Current Gain-Bandwidth Product fT 50 MHz VCE = -20V, IC = -20mA, f = 20MHz 4
Output Capacitance Cobo 20 pF VCB = -20V, f = 1MHz 4
Turn-On Times ton 140 ns IC = -100mA, IB1 = 10mA, IB2 = -20mA, VC = -100V 4
Turn-Off Times toff 2000 ns IC = -100mA, IB1 = 10mA, IB2 = -20mA, VC = -100V 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish, Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZTX758
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: ztx758-etched.step / ztx758-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ztx758.step / ztx758.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 ec79577c583d7ee8, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF