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Contents

README

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ZTX694B

Diodes Incorporated · Bipolar Transistors - BJT · TO-92

ZTX694B from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector; VCEO 120 V, VCBO 120 V, continuous IC 0.5 A, peak ICM 1 A.
2 B input Base; emitter-base voltage VEBO max 5 V.
3 E passive Emitter; common terminal of the NPN transistor.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-92
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 120 V 1
Collector-Emitter Voltage VCEO 120 V 1
Emitter-Base Voltage VEBO 5 V 1
Peak Pulse Current ICM 1 A 1
Continuous Collector Current IC 0.5 A 1
Practical Power Dissipation Ptotp 1.5 W Device mounted on P.C.B. with copper equal to 1 inch square minimum 1
Power Dissipation Ptot 1 W Tamb=25°C 1
Power Dissipation Derating Ptot 5.7 mW/°C derate above 25°C 1
Operating and Storage Temperature Range Tj:Tstg -55 200 °C 1
Collector-Base Breakdown Voltage V(BR)CBO 120 V IC=100µA 1
Collector-Emitter Breakdown Voltage V(BR)CEO 120 V IC=10mA* 1
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA 1
Collector Cut-Off Current ICBO 0.1 µA VCB=100V 1
Emitter Cut-Off Current IEBO 0.1 µA VEB=4V 1
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC=100mA, IB=0.5mA* 1
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=400mA, IB=5mA* 1
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA* 1
Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* 1
Static Forward Current Transfer Ratio hFE 500 IC=100mA, VCE=2V* 1
Static Forward Current Transfer Ratio hFE 400 IC=200mA, VCE=2V* 1
Static Forward Current Transfer Ratio hFE 150 IC=400mA, VCE=2V* 1
Transition Frequency fT 130 MHz IC=50mA, VCE=5V, f=50MHz 1
Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz 1
Output Capacitance Cobo 9 pF VCB=10V, f=1MHz 1
Turn-On Time ton 80 ns IC=100mA, IB1=10mA, IB2=10mA, VCC=50V 1
Turn-Off Time toff 2900 ns IC=100mA, IB1=10mA, IB2=10mA, VCC=50V 1
Thermal Resistance, Junction to Ambient 1 Rth(j-amb)1 175 °C/W 1
Thermal Resistance, Junction to Ambient 2 Rth(j-amb)2 116 °C/W 1
Thermal Resistance, Junction to Case Rth(j-case) 70 °C/W 1

CAD (KiCad official)

  • Symbol: ZTX694B
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: ztx694b-etched.step / ztx694b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ztx694b.step / ztx694b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (3 pp, sha256 e734f06b59cf8eaf, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF