component
ZTX558
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ZTX558
Diodes Incorporated · Bipolar Transistors - BJT · TO-92
ZTX558 from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector; rated VCEO -400V and IC -200mA continuous. |
| 2 | B | passive | Base; emitter-base voltage limited to VEBO -5V. |
| 3 | E | passive | Emitter of the PNP transistor; the emitter-base breakdown voltage is -5V minimum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -400 | V | IC = -100µA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -400 | V | IC = -10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -100µA | 4 | ||
| DC Current Gain | hFE | 100 | VCE = -10V, IC = -1mA | 4 | |||
| DC Current Gain | hFE | 15 | VCE = -10V, IC = -100mA | 4 | |||
| DC Current Gain | hFE | 300 | 4 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.2 | V | IC = -20mA, IB = -2mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC = -50mA, IB = -6mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC = -50mA, IB = -5mA | 4 | ||
| Base-Emitter Turn-On Voltage | VBE(on) | -0.9 | V | IC = -50mA, VCE = -10V | 4 | ||
| Collector-Cutoff Current | ICBO | -100 | nA | VCB = -320V | 4 | ||
| Emitter-Cutoff Current | IEBO | -100 | nA | VEB = -4V | 4 | ||
| Current Gain-Bandwidth Product | fT | 50 | MHz | VCE = -20V, IC = -10mA, f = 20MHz | 4 | ||
| Output Capacitance | COBO | 5 | pF | VCB = -20V, f = 1MHz | 4 | ||
| Switching Time (turn-on) | ton | 95 | ns | IC = -50mA, VC = -100V, IB1 = 5mA, IB2 = -10mA | 4 | ||
| Switching Time (turn-off) | toff | 1600 | ns | IC = -50mA, VC = -100V, IB1 = 5mA, IB2 = -10mA | 4 | ||
| Collector-Base Voltage | VCBO | -400 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | -400 | V | 2 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 2 | |||
| Collector Current | IC | -200 | mA | 2 | |||
| Power Dissipation | PD | 1.5 | W | Note 5: through-hole at seating plane, 2.5mm lead length, collector lead on 25mm × 25mm 1oz copper, still air | 2 | ||
| Power Dissipation | PD | 1 | W | Note 6: minimum recommended pad layout, 12mm lead length | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 116 | °C/W | Note 5 | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 175 | °C/W | Note 6 | 2 | ||
| Thermal Resistance Junction to Lead | RθJL | 63.75 | °C/W | Note 7: junction to solder-point at seating plane, 2.5mm from bottom of package | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 200 | °C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZTX558 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
ztx558-etched.step/ztx558-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ztx558.step/ztx558.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
607afa207af7b13a, retrieved 2026-10-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ZTX558
**Diodes Incorporated** · Bipolar Transistors - BJT · TO-92
ZTX558 from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector; rated VCEO -400V and IC -200mA continuous. |
| 2 | B | passive | Base; emitter-base voltage limited to VEBO -5V. |
| 3 | E | passive | Emitter of the PNP transistor; the emitter-base breakdown voltage is -5V minimum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -400 | | | V | IC = -100µA | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | -400 | | | V | IC = -10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | | | V | IE = -100µA | 4 |
| DC Current Gain | hFE | 100 | | | | VCE = -10V, IC = -1mA | 4 |
| DC Current Gain | hFE | 15 | | | | VCE = -10V, IC = -100mA | 4 |
| DC Current Gain | hFE | | | 300 | | | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.2 | V | IC = -20mA, IB = -2mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.5 | V | IC = -50mA, IB = -6mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.9 | V | IC = -50mA, IB = -5mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(on) | | | -0.9 | V | IC = -50mA, VCE = -10V | 4 |
| Collector-Cutoff Current | ICBO | | | -100 | nA | VCB = -320V | 4 |
| Emitter-Cutoff Current | IEBO | | | -100 | nA | VEB = -4V | 4 |
| Current Gain-Bandwidth Product | fT | 50 | | | MHz | VCE = -20V, IC = -10mA, f = 20MHz | 4 |
| Output Capacitance | COBO | | | 5 | pF | VCB = -20V, f = 1MHz | 4 |
| Switching Time (turn-on) | ton | | | 95 | ns | IC = -50mA, VC = -100V, IB1 = 5mA, IB2 = -10mA | 4 |
| Switching Time (turn-off) | toff | | | 1600 | ns | IC = -50mA, VC = -100V, IB1 = 5mA, IB2 = -10mA | 4 |
| Collector-Base Voltage | VCBO | | | -400 | V | | 2 |
| Collector-Emitter Voltage | VCEO | | | -400 | V | | 2 |
| Emitter-Base Voltage | VEBO | | | -5 | V | | 2 |
| Collector Current | IC | | | -200 | mA | | 2 |
| Power Dissipation | PD | | | 1.5 | W | Note 5: through-hole at seating plane, 2.5mm lead length, collector lead on 25mm × 25mm 1oz copper, still air | 2 |
| Power Dissipation | PD | | | 1 | W | Note 6: minimum recommended pad layout, 12mm lead length | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 116 | °C/W | Note 5 | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 175 | °C/W | Note 6 | 2 |
| Thermal Resistance Junction to Lead | RθJL | | | 63.75 | °C/W | Note 7: junction to solder-point at seating plane, 2.5mm from bottom of package | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 200 | °C | | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM | | | 4000 | V | JEDEC Class 3A | 2 |
| Electrostatic Discharge - Machine Model | ESD MM | | | 400 | V | JEDEC Class C | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | • Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `ZTX558`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `ztx558-etched.step` / `ztx558-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ztx558.step` / `ztx558.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/ZTX558.pdf) (7 pp, sha256 `607afa207af7b13a`, retrieved 2026-10-24, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ztx558-datasheet.pdf)