component
ZTX458STZ
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownZTX458STZ
Diodes Incorporated · Bipolar Transistors - BJT · TO-92-3
ZTX458STZ from Diodes Incorporated, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector; VCBO and VCEO are 400 V max, and continuous collector current is 300 mA max. |
| 2 | B | passive | Base; the emitter-base voltage VEBO is 5 V max. |
| 3 | E | passive | Emitter; the terminal common to the base and collector circuits of the NPN transistor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TO-92-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 400 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 400 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Continuous Collector Current | IC | 300 | mA | 1 | |||
| Power Dissipation | Ptot | 1 | W | Tamb=25°C | 1 | ||
| Operating and Storage Temperature Range | Tj:Tstg | -55 | 200 | °C | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 400 | V | IC=100µA | 1 | ||
| Collector-Emitter Breakdown Voltage | VCEO(sus) | 400 | V | IC=10mA* | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100µA | 1 | ||
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=320V | 1 | ||
| Emitter Cut-Off Current | IEBO | 100 | nA | VEB=4V | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | V | IC=20mA, IB=2mA | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=50mA, IB=6mA | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC=50mA, IB=5mA | 1 | ||
| Base-Emitter Turn On Voltage | VBE(on) | 0.9 | V | IC=50mA, VCE=10V | 1 | ||
| Static Forward Current Transfer Ratio | hFE | 100 | IC=1mA, VCE=10V | 1 | |||
| Static Forward Current Transfer Ratio | hFE | 100 | 300 | IC=50mA, VCE=10V | 1 | ||
| Static Forward Current Transfer Ratio | hFE | 15 | IC=100mA, VCE=10V* | 1 | |||
| Transition Frequency | fT | 50 | MHz | IC=10mA, VCE=20V, f=20MHz | 1 | ||
| Output Capacitance | Cobo | 5 | pF | VCB=20V, f=1MHz | 1 |
CAD (KiCad official)
- Symbol:
ZTX458STZ - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
ztx458stz-etched.step/ztx458stz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ztx458stz.step/ztx458stz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (2 pp, sha256
d2ed16abd981a31c, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).