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ZHB6718TA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-223-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZHB6718TA

Diodes Incorporated · Bipolar (BJT) · SOT-223-8

ZHB6718TA from Diodes Incorporated, in a SOT-223-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B3 input Base of transistor Q3 in the H-bridge.
2 E2,E3 passive Common emitter terminal of Q2 and Q3 (bottom rail of the H-bridge).
3 B2 input Base of transistor Q2 in the H-bridge.
4 B1 input Base of transistor Q1 in the H-bridge.
5 C1,C2 passive Common collector node of Q1 and Q2 (one H-bridge output), rated up to 2.5A continuous collector current.
6 E1,E4 passive Common emitter terminal of Q1 and Q4 (top rail of the H-bridge).
7 C3,C4 passive Common collector node of Q3 and Q4 (other H-bridge output), rated up to 2.5A continuous collector current.
8 B4 input Base of transistor Q4 in the H-bridge.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-223-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (NPN) VCBO 20 V 2
Collector-Base Voltage (PNP) VCBO -20 V 2
Collector-Emitter Voltage (NPN) VCEO 20 V 2
Collector-Emitter Voltage (PNP) VCEO -20 V 2
Emitter-Base Voltage (NPN) VEBO 7 V 2
Emitter-Base Voltage (PNP) VEBO -7 V 2
Continuous Collector Current (NPN) IC 2.5 A 2
Continuous Collector Current (PNP) IC -2.5 A 2
Peak Pulse Current (NPN) ICM 6 A Note 5 2
Peak Pulse Current (PNP) ICM -6 A Note 5 2
Collector Power Dissipation PD 1.25 W Note 5: single die active, 25mm x 25mm 2oz Cu, FR4, still air 2
Collector Power Dissipation PD 2 W Note 6: as Note 5, Q1/Q3 or Q2/Q4 active, power shared 2
Thermal Resistance, Junction to Ambient RθJA 100 C/W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 62.5 C/W Note 6 2
Thermal Resistance, Junction to Lead RθJL 62 C/W 2
Operating and Storage Temperature Range TJ,TSTG -55 150 C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC class 3A 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC class C 2
Collector-Base Breakdown Voltage (NPN) BVCBO 20 100 V IC = 100µA 5
Collector-Emitter Breakdown Voltage (NPN) BVCEO 20 27 V IC = 10mA 5
Emitter-Base Breakdown Voltage (NPN) BVEBO 5 8.3 V IE = 100µA 5
Collector Cut Off Current (NPN) ICBO 0.1 µA VCB = 16V 5
Emitter Cut Off Current (NPN) IEBO 0.1 µA VEB = 4V 5
DC Current Transfer Static Ratio (NPN) hFE 200 400 IC = 10mA, VCE = 2V 5
DC Current Transfer Static Ratio (NPN) hFE 300 450 IC = 100mA, VCE = 2V 5
DC Current Transfer Static Ratio (NPN) hFE 200 360 IC = 2A, VCE = 2V 5
Collector-Emitter Saturation Voltage (NPN) VCE(sat) 8 15 mV IC = 0.1A, IB = 10mA 5
Collector-Emitter Saturation Voltage (NPN) VCE(sat) 70 150 mV IC = 1A, IB = 10mA 5
Collector-Emitter Saturation Voltage (NPN) VCE(sat) 130 200 mV IC = 2.5A, IB = 50mA 5
Base-Emitter Saturation Voltage (NPN) VBE(sat) 0.89 1 V IC = 2.5A, IB = 50mA 5
Transitional Frequency (NPN) fT 100 140 MHz IC = 50mA, VCE = 10V, f = 100MHz 5
Output Capacitance (NPN) Cobo 23 30 pF VCB = 10V, f = 1MHz 5
Collector-Base Breakdown Voltage (PNP) BVCBO -20 -65 V IC = -100µA 7
Collector-Emitter Breakdown Voltage (PNP) BVCEO -20 -55 V IC = -10mA 7
Emitter-Base Breakdown Voltage (PNP) BVEBO -5 -8.8 V IE = -100µA 7
Collector Cutoff Current (PNP) ICBO -0.1 µA VCB = -15V 7
Emitter Cutoff Current (PNP) IEBO -0.1 µA VEB = -4V 7
DC Current Transfer Static Ratio (PNP) hFE 300 475 IC = -10mA, VCE = -2V 7
DC Current Transfer Static Ratio (PNP) hFE 300 450 IC = -100mA, VCE = -2V 7
DC Current Transfer Static Ratio (PNP) hFE 150 230 IC = -2A, VCE = -2V 7
DC Current Transfer Static Ratio (PNP) hFE 35 70 IC = -4A, VCE = -2V 7
Collector-Emitter Saturation Voltage (PNP) VCE(sat) -16 -40 mV IC = -100mA, IB = -10mA 7
Collector-Emitter Saturation Voltage (PNP) VCE(sat) -130 -200 mV IC = -1A, IB = -20mA 7
Collector-Emitter Saturation Voltage (PNP) VCE(sat) -190 -260 mV IC = -2.5A, IB = -200mA 7
Base-Emitter Saturation Voltage (PNP) VBE(sat) -0.98 -1.1 V IC = -2.5A, IB = -200mA 7
Transitional Frequency (PNP) fT 150 180 MHz IC = -50mA, VCE = -10V, f = 100MHz 7
Output Capacitance (PNP) Cobo 21 30 pF VCB = -10V, f = 1MHz 7

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZHB6718TA
  • Footprint: Package_TO_SOT_SMD:SOT-223-8
  • 3D model: SOT-223-8 (KiCad packages3D, STEP)
  • 3D model files: zhb6718ta-etched.step / zhb6718ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zhb6718ta.step / zhb6718ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (10 pp, sha256 6d559f4c2c69eb86, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF