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Contents

README

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ZD25Q80BSIGT

Zetta · NOR FLASH · SOP-8-208mil

ZD25Q80BSIGT from Zetta, in a SOP-8-208mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS# input Chip select input.
2 SO bidirectional SIO1: serial data output for 1 x I/O, and serial data input/output for 4 x I/O read mode.
3 WP# bidirectional SIO2: active-low write protection input, and serial data input/output for 4 x I/O read mode.
4 GND power_in Ground of the device.
5 SI bidirectional SIO0: serial data input for 1 x I/O, and serial data input/output for 4 x I/O read mode.
6 SCLK input Serial interface clock input.
7 HOLD# bidirectional SIO3: pauses the device without deselecting it, and serial data input/output for 4 x I/O read mode.
8 VCC power_in Power supply of the device, 2.3 to 3.6V for read, erase and program.

Key specifications

Parameter Value
Manufacturer Zetta
Package SOP-8-208mil
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage Vcc 2.3 3.6 V Read, Erase and Program 4
Operating temperature -40 85 °C Industrial 4
Deep power down current IDPD 0.5 1.5 uA CS#=Vcc, all other inputs at 0V or Vcc 17
Standby current ISB 12 uA CS#, HOLD#, WP#=VIH, all inputs at CMOS 17
Low power read current (03h) ICC1 2.3 3 mA f=55MHz; IOUT=0mA 17
Read current (0Bh) 85MHz ICC2 2.8 4 mA f=85MHz; IOUT=0mA 17
Read current (0Bh) 104MHz ICC2 2.8 4.5 mA f=104MHz; IOUT=0mA 17
Program current ICC3 5 6 mA CS#=Vcc 17
Erase current ICC4 5 6 mA CS#=Vcc 17
Input load current ILI 1 uA All inputs at CMOS 17
Output leakage ILO 1 uA All inputs at CMOS 17
Output low voltage VOL 0.2 V IOL=100uA 17
Storage temperature -65 150 °C 16
Operation temperature -40 125 °C 16
Maximum operation voltage 4 V 16
Voltage on any pin with respect to ground -0.6 4.1 V 16
DC output current 5 mA 16
Output capacitance COUT 8 pF VOUT=GND; TA=25°C, F=1MHz, Vcc=3.0V 16
Input capacitance CIN 6 pF VIN=GND; TA=25°C, F=1MHz, Vcc=3.0V 16
Clock frequency (FAST_READ etc.) fSCLK 104 MHz FAST_READ, RDSFDP, PP, SE, BE32K, BE, CE, DP, RES 18
Clock frequency for READ fRSCLK 55 MHz READ instructions 18
Clock frequency for 2READ, DREAD fTSCLK 104 MHz 2READ, DREAD instructions 18
Clock frequency for 4READ, QREAD fQ 104 MHz 4READ, QREAD instructions 18
Clock frequency for QPP fQPP 104 MHz Quad page program 18
Clock high time tCH 4.5 ns 18
Clock low time tCL 4.5 ns 18
CS# active setup time tSLCH 5 ns relative to SCLK 18
CS# not active hold time tCHSL 5 ns relative to SCLK 18
Data in setup time tDVCH 2 ns 18
Data in hold time tCHDX 3 ns 18
CS# active hold time tCHSH 5 ns relative to SCLK 18
CS# not active setup time tSHCH 5 ns relative to SCLK 18
CS# deselect time read to next read tSHSL 15 ns From Read to next Read 18
CS# deselect time write/erase/program to read status tSHSL 30 ns From Write, Erase, Program to Read Status Register 18
Output disable time tSHQZ 6 ns 18
Clock low to output valid 30pF tCLQV 7 ns Loading 30pF 18
Clock low to output valid 15pF tCLQV 6 ns Loading 15pF 18
Output hold time tCLQX 0 ns 18
HOLD# active setup time tHLCH 5 ns relative to SCLK 18
HOLD# active hold time tCHHH 5 ns relative to SCLK 18
HOLD# not active setup time tHHCH 5 ns relative to SCLK 18
HOLD# not active hold time tCHHL 5 ns relative to SCLK 18
HOLD# to output Low-Z tHHQX 6 ns 18
HOLD# to output High-Z tHLQZ 6 ns 18
Write protect setup time tWHSL 20 ns WRSR instruction only 18
Write protect hold time tSHWL 100 ns WRSR instruction only 18
CS# high to deep power-down mode tDP 3 us 18
CS# high to standby mode without electronic signature read tRES1 8 us 18
CS# high to standby mode with electronic signature read tRES2 8 us printed as 'Without Electronic Signature Read' 18
Write status register cycle time tW 8 12 ms 18
Reset recovery time (erase/program except WRSR) tReady 70 us 18
Reset recovery time (WRSR) tReady 8 12 ms 18
Erase suspend latency TESL 30 us 19
Program suspend latency TPSL 30 us 19
Latency between program resume and next suspend TPRS 0.3 us 19
Latency between erase resume and next suspend TERS 0.3 us 19
Page program time tPP 2 3 ms up to 256 bytes 19
Page erase time tPE 10 12 ms 19
Sector erase time tSE 10 12 ms 19
Block erase time 32K bytes tBE1 10 12 ms 19
Block erase time 64K bytes tBE2 10 12 ms 19
Chip erase time tCE 10 12 ms 19

CAD (KiCad official)

  • Symbol: ZD25Q80BSIGT
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8-208mil (KiCad packages3D, STEP)
  • 3D model files: zd25q80bsigt-etched.step / zd25q80bsigt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zd25q80bsigt.step / zd25q80bsigt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Zetta datasheet (71 pp, sha256 dace24d0fb0778cc, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF