component
YSK038N010T1A
Public Made by Adomby adom
luxin-semi IGBT Transistors / Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YSK038N010T1A
luxin-semi · IGBT Transistors / Modules · TO-263
YSK038N010T1A from luxin-semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±20 V and threshold VGS(th) of 2.0 V min to 4.0 V max at ID = 250 µA. |
| 2 | D | passive | Drain, the middle lead (shortened stub), which is internally connected to the D (TAB) metal tab; rated VDS 100 V and ID 120 A at TC = 25°C. |
| 3 | S | passive | Source; carries the body diode return with ID up to 120 A at TC = 25°C and RDS(on) max 4.0 mΩ for TO-263 at VGS = 10 V, ID = 50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | luxin-semi |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 100 | V | Tj=25°C | 2 | ||
| Continuous drain current, limited by Tjmax | ID | 120 | A | TC = 25°C | 2 | ||
| Continuous drain current, limited by Tjmax | ID | 110 | A | TC = 100°C | 2 | ||
| Pulsed drain current | IDM | 480 | A | TC = 25°C, tp limited by Tjmax | 2 | ||
| Avalanche energy, single pulse | EAS | 306 | mJ | L=0.5mH, Rg=25Ω | 2 | ||
| Gate source voltage | VGS | -20 | 20 | V | 2 | ||
| Power dissipation | Ptot | 236 | W | TC = 25°C | 2 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction - case | Rθ(j-c) | 0.54 | °C/W | 2 | |||
| Thermal resistance, junction - ambient | Rθ(j-a) | 70 | °C/W | minimal footprint | 2 | ||
| Drain to Source Breakdown Voltage | BVDSS | 100 | 108 | V | VGS = 0V, ID = 250μA | 2 | |
| G-S Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS = VCS, ID = 250μA | 2 |
| Zero gate voltage drain current | IDSS | 0.05 | 1 | μA | VDS = 100V, VGS = 0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | μA | VDS = 100V, VGS = 0V, Tj=125°C | 2 | |
| G-S Leakage Current | IGSS | 10 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Drain-source on-state resistance (TO-263) | RDS(on) | 3.2 | 4 | mΩ | VGS = 10V, ID = 50A | 2 | |
| Transconductance | gfs | 50 | S | VDS=5V, ID=50A | 2 | ||
| Body Diode Forward Voltage | VSD | 0.85 | 1.2 | V | ISD = 50A, VGS=0V | 3 | |
| Input capacitance | Ciss | 4700 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 1080 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 31 | pF | VDS = 50V, VGS = 0V, f = 1MHz | 3 | ||
| Gate resistance | RG | 1.8 | Ω | VDS = 0V, VGS = 0V, f=1MHz | 3 | ||
| Gate Total Charge | Qg | 67 | nC | VGS=10V, VDS=50V, ID=20A, f=1MHz | 3 | ||
| Gate-Source charge | Qgs | 27 | nC | VGS=10V, VDS=50V, ID=20A, f=1MHz | 3 | ||
| Gate-Drain charge | Qgd | 11 | nC | VGS=10V, VDS=50V, ID=20A, f=1MHz | 3 | ||
| Turn-on Delay Time | td(on) | 29 | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 | ||
| Rise Time | tr | 84 | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 | ||
| Turn-off Delay Time | td(off) | 46 | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 | ||
| Fall Time | tf | 93 | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 | ||
| Body Diode Reverse Recovery Time | trr | 67 | ns | IF = 50A, dI/dt=100A/μs | 3 | ||
| Body Diode Reverse Recovery Charge | Qrr | 125 | nC | IF = 50A, dI/dt=100A/μs | 3 |
CAD (KiCad official)
- Symbol:
YSK038N010T1A - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ysk038n010t1a-etched.step/ysk038n010t1a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ysk038n010t1a.step/ysk038n010t1a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: luxin-semi datasheet (8 pp, sha256
9c90d535f938d871, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YSK038N010T1A
**luxin-semi** · IGBT Transistors / Modules · TO-263
YSK038N010T1A from luxin-semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±20 V and threshold VGS(th) of 2.0 V min to 4.0 V max at ID = 250 µA. |
| 2 | D | passive | Drain, the middle lead (shortened stub), which is internally connected to the D (TAB) metal tab; rated VDS 100 V and ID 120 A at TC = 25°C. |
| 3 | S | passive | Source; carries the body diode return with ID up to 120 A at TC = 25°C and RDS(on) max 4.0 mΩ for TO-263 at VGS = 10 V, ID = 50 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | luxin-semi |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | | | 100 | V | Tj=25°C | 2 |
| Continuous drain current, limited by Tjmax | ID | | | 120 | A | TC = 25°C | 2 |
| Continuous drain current, limited by Tjmax | ID | | | 110 | A | TC = 100°C | 2 |
| Pulsed drain current | IDM | | | 480 | A | TC = 25°C, tp limited by Tjmax | 2 |
| Avalanche energy, single pulse | EAS | | | 306 | mJ | L=0.5mH, Rg=25Ω | 2 |
| Gate source voltage | VGS | -20 | | 20 | V | | 2 |
| Power dissipation | Ptot | | | 236 | W | TC = 25°C | 2 |
| Operating junction and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 2 |
| Thermal resistance, junction - case | Rθ(j-c) | | | 0.54 | °C/W | | 2 |
| Thermal resistance, junction - ambient | Rθ(j-a) | | | 70 | °C/W | minimal footprint | 2 |
| Drain to Source Breakdown Voltage | BVDSS | 100 | 108 | | V | VGS = 0V, ID = 250μA | 2 |
| G-S Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS = VCS, ID = 250μA | 2 |
| Zero gate voltage drain current | IDSS | | 0.05 | 1 | μA | VDS = 100V, VGS = 0V, Tj=25°C | 2 |
| Zero gate voltage drain current | IDSS | | 10 | 100 | μA | VDS = 100V, VGS = 0V, Tj=125°C | 2 |
| G-S Leakage Current | IGSS | | 10 | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Drain-source on-state resistance (TO-263) | RDS(on) | | 3.2 | 4 | mΩ | VGS = 10V, ID = 50A | 2 |
| Transconductance | gfs | | 50 | | S | VDS=5V, ID=50A | 2 |
| Body Diode Forward Voltage | VSD | | 0.85 | 1.2 | V | ISD = 50A, VGS=0V | 3 |
| Input capacitance | Ciss | | 4700 | | pF | VDS = 50V, VGS = 0V, f = 1MHz | 3 |
| Output capacitance | Coss | | 1080 | | pF | VDS = 50V, VGS = 0V, f = 1MHz | 3 |
| Reverse transfer capacitance | Crss | | 31 | | pF | VDS = 50V, VGS = 0V, f = 1MHz | 3 |
| Gate resistance | RG | | 1.8 | | Ω | VDS = 0V, VGS = 0V, f=1MHz | 3 |
| Gate Total Charge | Qg | | 67 | | nC | VGS=10V, VDS=50V, ID=20A, f=1MHz | 3 |
| Gate-Source charge | Qgs | | 27 | | nC | VGS=10V, VDS=50V, ID=20A, f=1MHz | 3 |
| Gate-Drain charge | Qgd | | 11 | | nC | VGS=10V, VDS=50V, ID=20A, f=1MHz | 3 |
| Turn-on Delay Time | td(on) | | 29 | | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 |
| Rise Time | tr | | 84 | | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 |
| Turn-off Delay Time | td(off) | | 46 | | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 |
| Fall Time | tf | | 93 | | ns | VGS=10V, VDS=50V, RG=3.0Ω | 3 |
| Body Diode Reverse Recovery Time | trr | | 67 | | ns | IF = 50A, dI/dt=100A/μs | 3 |
| Body Diode Reverse Recovery Charge | Qrr | | 125 | | nC | IF = 50A, dI/dt=100A/μs | 3 |
## CAD (KiCad official)
- Symbol: `YSK038N010T1A`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `ysk038n010t1a-etched.step` / `ysk038n010t1a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ysk038n010t1a.step` / `ysk038n010t1a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [luxin-semi datasheet](docs/ysk038n010t1a-datasheet.pdf) (8 pp, sha256 `9c90d535f938d871`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ysk038n010t1a-datasheet.pdf)