component
YJS4409B
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJS4409B
Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8
YJS4409B from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied internally to pins 2 and 3; body diode runs source to drain, with continuous body-diode current up to -18 A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally to pins 1 and 3 in the schematic. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally to pins 1 and 2 in the schematic. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±25 V maximum with threshold of -1 V min to -2.5 V max at ID=-250 µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, common with pins 6, 7 and 8; VDS -30 V, ID -18 A at TA=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, common with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, common with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, common with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -30 | V | 1 | |||
| Gate-source Voltage | VGS | -25 | 25 | V | 1 | ||
| Drain Current | ID | -18 | A | TA=25℃ | 1 | ||
| Drain Current | ID | -11 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -200 | A | 1 | |||
| Avalanche energy | EAS | 400 | mJ | 1 | |||
| Total Power Dissipation | PD | 3 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 1.25 | W | TA=100℃ | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 32 | 40 | ℃/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS= 0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -100 | μA | VDS=-30V, VGS=0V, Tj=150℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±25V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 4 | 5.3 | mΩ | VGS=-20V, ID=-18A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 4.5 | 6 | mΩ | VGS=-10V, ID=-15A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 7.5 | 10 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Diode Forward Voltage | VSD | -0.85 | -1.2 | V | IS=-18A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -18 | A | 2 |
CAD (KiCad official)
- Symbol:
YJS4409B - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
yjs4409b-etched.step/yjs4409b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjs4409b.step/yjs4409b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256
60e5b37cd9f36b29, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).