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YJS4407C

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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJS4407C

Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8

YJS4407C from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied internally to pins 2 and 3; device is rated VDS -30 V and ID -12 A.
2 S passive Source of the P-channel MOSFET, tied internally to pins 1 and 3; body diode continuous current IS is -12 A max.
3 S passive Source of the P-channel MOSFET, tied internally to pins 1 and 2; gate-source voltage limit is ±25 V relative to the gate.
4 G input Gate of the P-channel MOSFET with VGS limit ±25 V and threshold VGS(th) of -1.2 V min to -2.8 V max at ID=-250 µA.
5 D passive Drain of the P-channel MOSFET, tied internally to pins 6, 7 and 8; VDS max -30 V.
6 D passive Drain of the P-channel MOSFET, tied internally to pins 5, 7 and 8; continuous ID is -12 A at TA=25℃.
7 D passive Drain of the P-channel MOSFET, tied internally to pins 5, 6 and 8; pulsed drain current IDM is -100 A.
8 D passive Drain of the P-channel MOSFET, tied internally to pins 5, 6 and 7; RDS(on) is 12 mΩ max at VGS=-10V, ID=-12A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS= 0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -100 μA VDS=-30V, VGS=0V, Tj=150℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±25V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.8 -2.8 V VDS= VGS, ID=-250μA 2
Static Drain-Source On-Resistance RDS(on) 7.5 10 mΩ VGS=-20V, ID=-12A 2
Static Drain-Source On-Resistance RDS(on) 9 12 mΩ VGS=-10V, ID=-12A 2
Static Drain-Source On-Resistance RDS(on) 11 15 mΩ VGS=-6V, ID=-10A 2
Static Drain-Source On-Resistance RDS(on) 14.5 20 mΩ VGS=-4.5V, ID=-10A 2
Diode Forward Voltage VSD -0.85 -1.2 V IS=-12A, VGS=0V 2
Maximum Body-Diode Continuous Current IS -12 A 2
Drain-source Voltage VDS -30 V TA=25℃ unless otherwise noted 1
Gate-source Voltage VGS -25 25 V 1
Drain Current ID -12 A TA=25℃ 1
Drain Current ID -7.5 A TA=100℃ 1
Pulsed Drain Current IDM -100 A 1
Avalanche energy EAS 100 mJ 1
Total Power Dissipation PD 2.5 W TA=25℃ 1
Total Power Dissipation PD 1 W TA=100℃ 1
Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 40 50 ℃/W Steady-State; footnote D: 1 in2 FR-4 board, 2oz Cu, still air, TA=25℃ 1

CAD (KiCad official)

  • Symbol: YJS4407C
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: yjs4407c-etched.step / yjs4407c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjs4407c.step / yjs4407c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256 4ea4e9cf1be9f65d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF