component
YJS2305A
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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YJS2305A
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23-6L
YJS2305A from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, ID -5.4A at TA=25°C). |
| 2 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, ID -5.4A at TA=25°C). |
| 3 | G | input | Gate; gate-source voltage limit ±10V, threshold VGS(th) -0.4V to -1.0V at ID=-250µA. |
| 4 | S | passive | Source; connected to the source of the P-channel MOSFET. |
| 5 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, pulsed drain current -22A). |
| 6 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, pulsed drain current -22A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -20 | V | 1 | |||
| Gate-source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current | ID | -5.4 | A | TA=25℃ | 1 | ||
| Drain Current | ID | -4.4 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -22 | A | 1 | |||
| Total Power Dissipation | PD | 1.2 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 0.8 | W | TA=70℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 104 | ℃/W | Mounted on 1 in 2 pad of 2oz copper (footnote B) | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 27 | 39 | mΩ | VGS=-4.5V, ID=-5.4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 36 | 49 | mΩ | VGS=-2.5V, ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 48 | 63 | mΩ | VGS=-1.8V, ID=-3A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-5.4A, VGS=0V | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
CAD (KiCad official)
- Symbol:
YJS2305A - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
yjs2305a-etched.step/yjs2305a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjs2305a.step/yjs2305a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256
b358211fc46f5c47, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YJS2305A
**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-23-6L
YJS2305A from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, ID -5.4A at TA=25°C). |
| 2 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, ID -5.4A at TA=25°C). |
| 3 | G | input | Gate; gate-source voltage limit ±10V, threshold VGS(th) -0.4V to -1.0V at ID=-250µA. |
| 4 | S | passive | Source; connected to the source of the P-channel MOSFET. |
| 5 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, pulsed drain current -22A). |
| 6 | D | passive | Drain; connected to the drain of the P-channel MOSFET (VDS -20V, pulsed drain current -22A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | -20 | V | | 1 |
| Gate-source Voltage | VGS | -10 | | 10 | V | | 1 |
| Drain Current | ID | | | -5.4 | A | TA=25℃ | 1 |
| Drain Current | ID | | | -4.4 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | -22 | A | | 1 |
| Total Power Dissipation | PD | | | 1.2 | W | TA=25℃ | 1 |
| Total Power Dissipation | PD | | | 0.8 | W | TA=70℃ | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 104 | ℃/W | Mounted on 1 in 2 pad of 2oz copper (footnote B) | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-20V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 27 | 39 | mΩ | VGS=-4.5V, ID=-5.4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 36 | 49 | mΩ | VGS=-2.5V, ID=-4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 48 | 63 | mΩ | VGS=-1.8V, ID=-3A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | IS=-5.4A, VGS=0V | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
## CAD (KiCad official)
- Symbol: `YJS2305A`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `yjs2305a-etched.step` / `yjs2305a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjs2305a.step` / `yjs2305a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590233595005460480) (7 pp, sha256 `b358211fc46f5c47`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yjs2305a-datasheet.pdf)