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YJS2301A
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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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yjs2301a: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
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YJS2301A
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23-6L
YJS2301A from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage limited to ±10 V, threshold -0.4 to -1.0 V. |
| 2 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rated -20 V, continuous current -3.7 A. |
| 3 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage limited to ±10 V, threshold -0.4 to -1.0 V. |
| 4 | D2 | passive | Drain of P-channel MOSFET 2; drain-source voltage rated -20 V, continuous current -3.7 A. |
| 5 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rated -20 V, continuous current -3.7 A. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1; drain-source voltage rated -20 V, continuous current -3.7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -20 | V | 1 | |||
| Gate-source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current | ID | -3.7 | A | TA=25℃ @ Steady State | 1 | ||
| Drain Current | ID | -3 | A | TA=70℃ @ Steady State | 1 | ||
| Pulsed Drain Current | IDM | -16 | A | 1 | |||
| Total Power Dissipation | PD | 1.3 | W | TA=25℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 96 | ℃/ W | Steady State | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS= 0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 49 | 64 | mΩ | VGS= -4.5V, ID=-3.4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 59 | 80 | mΩ | VGS= -2.5V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 79 | 110 | mΩ | VGS= -1.8V, ID=-2.5A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS=-3.7A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -3.7 | A | 2 |
CAD (KiCad official)
- Symbol:
YJS2301A - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
yjs2301a-etched.step/yjs2301a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjs2301a.step/yjs2301a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
ec668ebb2247c798, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YJS2301A
**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-23-6L
YJS2301A from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage limited to ±10 V, threshold -0.4 to -1.0 V. |
| 2 | S2 | passive | Source of P-channel MOSFET 2; drain-source voltage rated -20 V, continuous current -3.7 A. |
| 3 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage limited to ±10 V, threshold -0.4 to -1.0 V. |
| 4 | D2 | passive | Drain of P-channel MOSFET 2; drain-source voltage rated -20 V, continuous current -3.7 A. |
| 5 | S1 | passive | Source of P-channel MOSFET 1; drain-source voltage rated -20 V, continuous current -3.7 A. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1; drain-source voltage rated -20 V, continuous current -3.7 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | -20 | V | | 1 |
| Gate-source Voltage | VGS | -10 | | 10 | V | | 1 |
| Drain Current | ID | | | -3.7 | A | TA=25℃ @ Steady State | 1 |
| Drain Current | ID | | | -3 | A | TA=70℃ @ Steady State | 1 |
| Pulsed Drain Current | IDM | | | -16 | A | | 1 |
| Total Power Dissipation | PD | | | 1.3 | W | TA=25℃ | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 96 | ℃/ W | Steady State | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS= 0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 49 | 64 | mΩ | VGS= -4.5V, ID=-3.4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 59 | 80 | mΩ | VGS= -2.5V, ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 79 | 110 | mΩ | VGS= -1.8V, ID=-2.5A | 2 |
| Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | IS=-3.7A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | -3.7 | A | | 2 |
## CAD (KiCad official)
- Symbol: `YJS2301A`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `yjs2301a-etched.step` / `yjs2301a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjs2301a.step` / `yjs2301a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916224504049664) (6 pp, sha256 `ec668ebb2247c798`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yjs2301a-datasheet.pdf)