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YJS10N04A

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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJS10N04A

Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8

YJS10N04A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to pins 2 and 3; body-diode anode side, continuous body-diode current IS 10 A.
2 S passive Source of the N-channel MOSFET, tied to pins 1 and 3 in the same device.
3 S passive Source of the N-channel MOSFET, tied to pins 1 and 2 in the same device.
4 G input Gate of the N-channel MOSFET; VGS maximum ±20 V, threshold VGS(th) 1.0 V min to 2.5 V max at 250 µA.
5 D passive Drain of the MOSFET, tied to pins 6, 7 and 8; VDS 40 V maximum, ID 10 A at TA=25℃.
6 D passive Drain of the MOSFET, tied to pins 5, 7 and 8 in the same device.
7 D passive Drain of the MOSFET, tied to pins 5, 6 and 8 in the same device.
8 D passive Drain of the MOSFET, tied to pins 5, 6 and 7 in the same device.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 40 V 1
Gate-source Voltage VGS -20 20 V 1
Drain Current ID 10 A TA=25℃ 1
Drain Current ID 7 A TA=100℃ 1
Pulsed Drain Current IDM 50 A 1
Single Pulse Avalanche Energy EAS 70 mJ 1
Total Power Dissipation PD 3 W TA=25℃ 1
Total Power Dissipation PD 1.2 W TA=100℃ 1
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Lead RθJL 30 ℃/W 1
Thermal Resistance Junction-to-Ambient RθJA 41.5 ℃/W Mounted on 1 in² pad, 2oz copper (note B) 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 12.5 15 mΩ VGS= 10V, ID=8.0A 2
Static Drain-Source On-Resistance RDS(ON) 15.5 24 mΩ VGS= 4.5V, ID=4.0A 2
Diode Forward Voltage VSD 0.85 1.2 V IS=10A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 10 A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2

CAD (KiCad official)

  • Symbol: YJS10N04A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: yjs10n04a-etched.step / yjs10n04a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjs10n04a.step / yjs10n04a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256 4667928960223871, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF