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YJS05N06A
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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YJS05N06A
Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8
YJS05N06A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V, ID 5.0A at TA=25℃); pin 1 is marked on the package. |
| 2 | G1 | input | Gate of MOSFET 1; VGS maximum ±20V, threshold 1.0V min to 2.5V max at ID=250μA. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 60V, ID 5.0A at TA=25℃). |
| 4 | G2 | input | Gate of MOSFET 2; VGS maximum ±20V, threshold 1.0V min to 2.5V max at ID=250μA. |
| 5 | D2 | passive | Drain of MOSFET 2, internally common with pin 6; VDS maximum 60V. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; VDS maximum 60V. |
| 7 | D1 | passive | Drain of MOSFET 1, internally common with pin 8; VDS maximum 60V. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; VDS maximum 60V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 44 | mΩ | VGS= 10V, ID=5.0A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 39 | 49 | mΩ | VGS= 4.5V, ID=4.0A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS=5.0A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 5 | A | 2 | |||
| Drain-ream-source Voltage (absolute maximum) | VDS | 60 | V | 1 | |||
| Gate-source Voltage (absolute maximum) | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 5 | A | TA=25℃ @ Steady State | 1 | ||
| Drain Current | ID | 4 | A | TA=70℃ @ Steady State | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Total Power Dissipation | PD | 3.1 | W | TA=25℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 40.3 | ℃/W | Steady State; mounted on 1 in 2 pad of 2oz copper (footnote B) | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Input Capacitance | Ciss | 1018 | pF | VDS=30V,VGS=0V,f=1MHZ | 2 | ||
| Output Capacitance | Coss | 70 | pF | VDS=30V,VGS=0V,f=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 62 | pF | VDS=30V,VGS=0V,f=1MHZ | 2 | ||
| Total Gate Charge | Qg | 26 | nC | VGS=10V,VDS=30V,ID=10A | 2 | ||
| Gate Source Charge | Qgs | 5.4 | nC | VGS=10V,VDS=30V,ID=10A | 2 | ||
| Gate Drain Charge | Qgd | 6.5 | nC | VGS=10V,VDS=30V,ID=10A | 2 | ||
| Reverse Recovery Charge | Qrr | 11.7 | nC | IF=20A, di/dt=500A/us | 2 | ||
| Reverse Recovery Time | trr | 23 | ns | IF=20A, di/dt=500A/us | 2 | ||
| Turn-on Delay Time | tD(on) | 10 | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 20 | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 | ||
| Turn-off Delay Time | tD(off) | 29 | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 | ||
| Turn-off Fall Time | tf | 21 | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
CAD (KiCad official)
- Symbol:
YJS05N06A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
yjs05n06a-etched.step/yjs05n06a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjs05n06a.step/yjs05n06a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256
ad6c9a642841083b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YJS05N06A
**Yangzhou Yangjie Elec Tech** · MOSFETs · SOP-8
YJS05N06A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V, ID 5.0A at TA=25℃); pin 1 is marked on the package. |
| 2 | G1 | input | Gate of MOSFET 1; VGS maximum ±20V, threshold 1.0V min to 2.5V max at ID=250μA. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 60V, ID 5.0A at TA=25℃). |
| 4 | G2 | input | Gate of MOSFET 2; VGS maximum ±20V, threshold 1.0V min to 2.5V max at ID=250μA. |
| 5 | D2 | passive | Drain of MOSFET 2, internally common with pin 6; VDS maximum 60V. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; VDS maximum 60V. |
| 7 | D1 | passive | Drain of MOSFET 1, internally common with pin 8; VDS maximum 60V. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; VDS maximum 60V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS= 0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 35 | 44 | mΩ | VGS= 10V, ID=5.0A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 39 | 49 | mΩ | VGS= 4.5V, ID=4.0A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS=5.0A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 5 | A | | 2 |
| Drain-ream-source Voltage (absolute maximum) | VDS | | | 60 | V | | 1 |
| Gate-source Voltage (absolute maximum) | VGS | -20 | | 20 | V | | 1 |
| Drain Current | ID | | | 5 | A | TA=25℃ @ Steady State | 1 |
| Drain Current | ID | | | 4 | A | TA=70℃ @ Steady State | 1 |
| Pulsed Drain Current | IDM | | | 25 | A | | 1 |
| Total Power Dissipation | PD | | | 3.1 | W | TA=25℃ | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 40.3 | ℃/W | Steady State; mounted on 1 in 2 pad of 2oz copper (footnote B) | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Input Capacitance | Ciss | | 1018 | | pF | VDS=30V,VGS=0V,f=1MHZ | 2 |
| Output Capacitance | Coss | | 70 | | pF | VDS=30V,VGS=0V,f=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 62 | | pF | VDS=30V,VGS=0V,f=1MHZ | 2 |
| Total Gate Charge | Qg | | 26 | | nC | VGS=10V,VDS=30V,ID=10A | 2 |
| Gate Source Charge | Qgs | | 5.4 | | nC | VGS=10V,VDS=30V,ID=10A | 2 |
| Gate Drain Charge | Qgd | | 6.5 | | nC | VGS=10V,VDS=30V,ID=10A | 2 |
| Reverse Recovery Charge | Qrr | | 11.7 | | nC | IF=20A, di/dt=500A/us | 2 |
| Reverse Recovery Time | trr | | 23 | | ns | IF=20A, di/dt=500A/us | 2 |
| Turn-on Delay Time | tD(on) | | 10 | | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 20 | | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 |
| Turn-off Delay Time | tD(off) | | 29 | | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 |
| Turn-off Fall Time | tf | | 21 | | ns | VGS=10V,VDD=30V, ID=2A,RL=1Ω, RGEN=3Ω | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
## CAD (KiCad official)
- Symbol: `YJS05N06A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `yjs05n06a-etched.step` / `yjs05n06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjs05n06a.step` / `yjs05n06a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918604390023168) (7 pp, sha256 `ad6c9a642841083b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yjs05n06a-datasheet.pdf)