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Contents

README

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YJS03N10A

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23-6L

YJS03N10A from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain; connected to the drain of the N-channel MOSFET (VDS 100V, ID 3A at TA=25C).
2 D passive Drain; connected to the drain of the N-channel MOSFET (VDS 100V, ID 3A at TA=25C).
3 G input Gate; gate-source voltage limit is ±20V, with threshold VGS(th) 1.1V min, 1.8V typ, 3.0V max.
4 S passive Source; connected to the source of the N-channel MOSFET, with body-diode continuous current IS of 3A.
5 D passive Drain; connected to the drain of the N-channel MOSFET (VDS 100V, pulsed drain current 12A).
6 D passive Drain; connected to the drain of the N-channel MOSFET (VDS 100V, pulsed drain current 12A).

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 100 V 1
Gate-source Voltage VGS -20 20 V 1
Drain Current ID 3 A TA=25℃ 1
Drain Current ID 2.4 A TA=70℃ 1
Pulsed Drain Current IDM 12 A Pulse Width≤300us, Duty cycle ≤2% (footnote A) 1
Single Pulse Avalanche Energy EAS 8 mJ 1
Total Power Dissipation PD 1.5 W TA=25℃ 1
Thermal Resistance Junction-to-Ambient RθJA 83 ℃/ W Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (footnote B) 1
Thermal Resistance From Junction To Lead RthJL 36 ℃/W 1
Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.1 1.8 3 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 95 120 mΩ VGS= 10V, ID=3A 2
Static Drain-Source On-Resistance RDS(ON) 100 140 mΩ VGS= 4.5V, ID=2.4A 2
Diode Forward Voltage VSD 0.8 1.2 V IS=3A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 3 A 2
Input Capacitance Ciss 800 pF VDS=50V,VGS=0V,f=1MHZ 2
Output Capacitance Coss 40 pF VDS=50V,VGS=0V,f=1MHZ 2
Reverse Transfer Capacitance Crss 32 pF VDS=50V,VGS=0V,f=1MHZ 2
Total Gate Charge Qg 16 nC VGS=10V,VDS=80V,ID=2.5A 2
Gate-Source Charge Qgs 2.5 nC VGS=10V,VDS=80V,ID=2.5A 2
Gate-Drain Charge Qgd 2.6 nC VGS=10V,VDS=80V,ID=2.5A 2
Turn-on Delay Time tD(on) 15 ns VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω 2
Turn-on Rise Time tr 5 ns VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω 2
Turn-off Delay Time tD(off) 30 ns VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω 2
Turn-off fall Time tf 5 ns VGS=10V,VDD=50V,RL=6.4Ω, RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: YJS03N10A
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: yjs03n10a-etched.step / yjs03n10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjs03n10a.step / yjs03n10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 4efab641ededfdf5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF