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YJL3415KC
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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YJL3415KC
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)
YJL3415KC from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; ESD protected up to 2.0 kV (HBM), VGS limited to ±10 V, threshold -0.55 V to -1.25 V. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode anode, continuous body-diode current up to -5 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS max -20 V, continuous ID -5 A at TA=25℃, pulsed -30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS= 0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (Tj=150℃) | IDSS | -100 | μA | VDS=-20V, VGS=0V, Tj=150℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | VGS= ±10V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.55 | -0.85 | -1.25 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 28 | 40 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 50 | 70 | mΩ | VGS=-2.5V, ID=-4A | 2 | |
| Diode Forward Voltage | VSD | -0.9 | -1.2 | V | IS=-5A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -5 | A | 2 | |||
| Drain-source Voltage | VDS | -20 | V | TA=25℃ unless otherwise noted | 1 | ||
| Gate-source Voltage | VGS | -10 | 10 | V | TA=25℃ unless otherwise noted | 1 | |
| Drain Current | ID | -5 | A | TA=25℃ | 1 | ||
| Drain Current | ID | -3.2 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Total Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 0.4 | W | TA=100℃ | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 100 | 120 | ℃/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
YJL3415KC - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
yjl3415kc-etched.step/yjl3415kc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjl3415kc.step/yjl3415kc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256
c508ee6b43342052, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YJL3415KC
**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-23(TO-236)
YJL3415KC from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; ESD protected up to 2.0 kV (HBM), VGS limited to ±10 V, threshold -0.55 V to -1.25 V. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode anode, continuous body-diode current up to -5 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS max -20 V, continuous ID -5 A at TA=25℃, pulsed -30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS= 0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (Tj=150℃) | IDSS | | | -100 | μA | VDS=-20V, VGS=0V, Tj=150℃ | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | | VGS= ±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.55 | -0.85 | -1.25 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 28 | 40 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 50 | 70 | mΩ | VGS=-2.5V, ID=-4A | 2 |
| Diode Forward Voltage | VSD | | -0.9 | -1.2 | V | IS=-5A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | -5 | A | | 2 |
| Drain-source Voltage | VDS | | | -20 | V | TA=25℃ unless otherwise noted | 1 |
| Gate-source Voltage | VGS | -10 | | 10 | V | TA=25℃ unless otherwise noted | 1 |
| Drain Current | ID | | | -5 | A | TA=25℃ | 1 |
| Drain Current | ID | | | -3.2 | A | TA=100℃ | 1 |
| Pulsed Drain Current | IDM | | | -30 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 |
| Total Power Dissipation | PD | | | 1 | W | TA=25℃ | 1 |
| Total Power Dissipation | PD | | | 0.4 | W | TA=100℃ | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | 100 | 120 | ℃/W | Steady-State | 1 |
## CAD (KiCad official)
- Symbol: `YJL3415KC`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `yjl3415kc-etched.step` / `yjl3415kc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjl3415kc.step` / `yjl3415kc.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](docs/yjl3415kc-datasheet.pdf) (7 pp, sha256 `c508ee6b43342052`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yjl3415kc-datasheet.pdf)