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YJL3400C

Public Made by Adom

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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJL3400C

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)

YJL3400C from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; voltage-controlled input with VGS limit of ±12 V and threshold VGS(th) of 0.45 V min to 1 V max at ID=250 µA.
2 S passive Source; connects to the body diode anode, with continuous body-diode current up to 5 A.
3 D passive Drain; VDS up to 30 V, continuous ID 5 A at TA=25℃ and pulsed IDM 30 A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current (150℃) IDSS 100 μA VDS=30V, VGS=0V, Tj=150℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.45 0.7 1 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 23 30 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 27 35 mΩ VGS=2.5V, ID=3A 2
Static Drain-Source On-Resistance RDS(ON) 35 50 mΩ VGS=1.8V, ID=2A 2
Diode Forward Voltage VSD 0.9 1.2 V IS=5A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 5 A 2
Drain-source Voltage VDS 30 V TA=25℃ 1
Gate-source Voltage VGS -12 12 V TA=25℃ 1
Drain Current ID 5 A TA=25℃ 1
Drain Current ID 3 A TA=100℃ 1
Pulsed Drain Current IDM 30 A TA=25℃ 1
Total Power Dissipation PD 1 W TA=25℃ 1
Total Power Dissipation PD 0.4 W TA=100℃ 1
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 100 125 ℃/W Steady-State 1
Gate resistance RG 3 Ω f=1MHz, Open drain 2
Input Capacitance Ciss 550 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 60 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 50 pF VDS=15V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 16 nC VGS=10V, VDS=15V, ID=5A 2
Gate-Source Charge Qgs 2 nC VGS=10V, VDS=15V, ID=5A 2
Gate-Drain Charge Qgd 2 nC VGS=10V, VDS=15V, ID=5A 2
Reverse Recovery Charge Qrr 2 nC IF=5A, di/dt=100A/us 2
Reverse Recovery Time trr 6 ns IF=5A, di/dt=100A/us 2
Turn-on Delay Time tD(on) 6 ns VGS=10V, VDD=15V, ID=5A, RGEN=3Ω 2
Turn-on Rise Time tr 49 ns VGS=10V, VDD=15V, ID=5A, RGEN=3Ω 2
Turn-off Delay Time tD(off) 19 ns VGS=10V, VDD=15V, ID=5A, RGEN=3Ω 2
Turn-off fall Time tf 89 ns VGS=10V, VDD=15V, ID=5A, RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: YJL3400C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: yjl3400c-etched.step / yjl3400c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjl3400c.step / yjl3400c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (8 pp, sha256 c980800570e2e634, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF