# YJL3139KADW

**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-363

YJL3139KADW from Yangzhou Yangjie Elec Tech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDS -20V, ID -0.5A at TA=25℃). |
| 2 | G1 | input | Gate of MOSFET 1 with ESD protection up to 2.0kV HBM; VGS max ±12V. |
| 3 | D2 | passive | Drain of MOSFET 2 (VDS -20V, ID -0.5A, pulsed IDM -2.6A). |
| 4 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -20V, ID -0.5A at TA=25℃). |
| 5 | G2 | input | Gate of MOSFET 2 with ESD protection up to 2.0kV HBM; VGS max ±12V. |
| 6 | D1 | passive | Drain of MOSFET 1 (VDS -20V, ID -0.5A, pulsed IDM -2.6A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -20 |  |  | V |  | 1 |
| Gate-source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Drain Current | ID | -0.5 |  |  | A | TA=25℃ Steady State | 1 |
| Drain Current | ID | -0.4 |  |  | A | TA=70℃ Steady State | 1 |
| Pulsed Drain Current | IDM | -2.6 |  |  | A |  | 1 |
| Total Power Dissipation | PD |  |  | 0.15 | W | TA=25℃ Steady State | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA |  |  | 833 | ℃/W | Steady State, device mounted on FR-4 PCB (note B) | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS= 0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 2 |
| Gate-Body Leakage Current | IGSS |  | 1.5 | 10 | μA | VGS= ±10V, VDS=0V | 2 |
| Gate-Body Leakage Current | IGSS |  | 500 | 2000 | nA | VGS= ±8V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.35 | -0.62 | -1.2 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 580 | 850 | mΩ | VGS= -4.5V, ID=-0.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 855 | 1200 | mΩ | VGS= -2.5V, ID=-0.3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 1350 | 2000 | mΩ | VGS= -1.8V, ID=-0.2A | 2 |
| Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | IS=-0.5A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -0.5 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `YJL3139KADW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `yjl3139kadw-etched.step` / `yjl3139kadw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjl3139kadw.step` / `yjl3139kadw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](docs/yjl3139kadw-datasheet.pdf) (6 pp, sha256 `0dc24debd5087a77`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjl3139kadw-datasheet.pdf)