component
YJL3134KAX
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| yjl3134kax-etched.glb | 23d ago |
| yjl3134kax-etched.step | 23d ago |
| yjl3134kax-hero.glb | 23d ago |
| yjl3134kax-hero.overlay.json | 23d ago |
| yjl3134kax.glb | 23d ago |
| yjl3134kax.kicad_mod | 23d ago |
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| yjl3134kax.step | 23d ago |
YJL3134KAX
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-563
YJL3134KAX from Yangzhou Yangjie Elec Tech, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 20 V, ID 0.5 A). |
| 2 | G1 | input | Gate of MOSFET 1, ESD protected up to 2.0 kV HBM, VGS maximum ±12 V. |
| 3 | D2 | passive | Drain of MOSFET 2 (N-channel, VDS 20 V, ID 0.5 A). |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 20 V, ID 0.5 A). |
| 5 | G2 | input | Gate of MOSFET 2, ESD protected up to 2.0 kV HBM, VGS maximum ±12 V. |
| 6 | D1 | passive | Drain of MOSFET 1 (N-channel, VDS 20 V, ID 0.5 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS= 0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.35 | 0.75 | 1.1 | V | VDS= VGS, ID=250μA | 2 |
| Gate-Body Leakage Current | IGSS | -2000 | 500 | 2000 | nA | VGS= ±8V, VDS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 | 2.5 | 10 | μA | VGS= ±10V, VDS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 220 | 300 | mΩ | VGS= 4.5V, ID=0.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 290 | 400 | mΩ | VGS= 2.5V, ID=0.45A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 420 | 700 | mΩ | VGS= 1.8V, ID=0.2A | 2 | |
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | IS=0.5A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 0.5 | A | 2 | |||
| Drain-source Voltage | VDS | 20 | V | 1 | |||
| Gate-source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current | ID | 0.5 | A | TA=25℃ @ Steady State | 1 | ||
| Drain Current | ID | 0.4 | A | TA=70℃ @ Steady State | 1 | ||
| Pulsed Drain Current | IDM | 3.3 | A | 1 | |||
| Total Power Dissipation | PD | 0.18 | W | TA=25℃ | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 694 | ℃/W | @ Steady State | 1 |
CAD (KiCad official)
- Symbol:
YJL3134KAX - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
yjl3134kax-etched.step/yjl3134kax-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjl3134kax.step/yjl3134kax.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
9fe6b54514270b1b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).