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YJL2312AQ
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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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YJL2312AQ
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23
YJL2312AQ from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V, with threshold VGS(th) 0.45 V min, 0.62 V typ, 1.0 V max at ID=250 µA. |
| 2 | S | passive | Source; ground-side terminal of the N-channel MOSFET, with continuous drain current of 6.8 A at TA=25 °C. |
| 3 | D | passive | Drain; rated for VDS of 20 V, 6.8 A continuous at TA=25 °C and 27 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -10 | 10 | V | 1 | ||
| Drain current | ID | 6.8 | A | TA=25℃ | 1 | ||
| Drain current | ID | 5.4 | A | TA=70℃ | 1 | ||
| Pulsed drain current | IDM | 27 | A | 1 | |||
| Total power dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Total power dissipation | PD | 0.8 | W | TA=70℃ | 1 | ||
| Thermal resistance junction-to-ambient | RθJA | 100 | ℃/ W | Mounted on 1 in 2 pad of 2oz copper (note B) | 1 | ||
| Junction and storage temperature range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.62 | 1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 13.5 | 18 | mΩ | VGS=4.5V, ID=6.8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 17 | 22 | mΩ | VGS=2.5V, ID=3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 39 | mΩ | VGS=1.8V, ID=2.5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=6.8A,VGS=0V | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
CAD (KiCad official)
- Symbol:
YJL2312AQ - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
yjl2312aq-etched.step/yjl2312aq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjl2312aq.step/yjl2312aq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256
95170d33e307b64b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# YJL2312AQ
**Yangzhou Yangjie Elec Tech** · MOSFETs · SOT-23
YJL2312AQ from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V, with threshold VGS(th) 0.45 V min, 0.62 V typ, 1.0 V max at ID=250 µA. |
| 2 | S | passive | Source; ground-side terminal of the N-channel MOSFET, with continuous drain current of 6.8 A at TA=25 °C. |
| 3 | D | passive | Drain; rated for VDS of 20 V, 6.8 A continuous at TA=25 °C and 27 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 20 | V | | 1 |
| Gate-source voltage | VGS | -10 | | 10 | V | | 1 |
| Drain current | ID | | | 6.8 | A | TA=25℃ | 1 |
| Drain current | ID | | | 5.4 | A | TA=70℃ | 1 |
| Pulsed drain current | IDM | | | 27 | A | | 1 |
| Total power dissipation | PD | | | 1.25 | W | TA=25℃ | 1 |
| Total power dissipation | PD | | | 0.8 | W | TA=70℃ | 1 |
| Thermal resistance junction-to-ambient | RθJA | | | 100 | ℃/ W | Mounted on 1 in 2 pad of 2oz copper (note B) | 1 |
| Junction and storage temperature range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.62 | 1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 13.5 | 18 | mΩ | VGS=4.5V, ID=6.8A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 17 | 22 | mΩ | VGS=2.5V, ID=3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 22 | 39 | mΩ | VGS=1.8V, ID=2.5A | 2 |
| Diode Forward Voltage | VSD | | 1.2 | | V | IS=6.8A,VGS=0V | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
## CAD (KiCad official)
- Symbol: `YJL2312AQ`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `yjl2312aq-etched.step` / `yjl2312aq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjl2312aq.step` / `yjl2312aq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589838694741422080) (7 pp, sha256 `95170d33e307b64b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/yjl2312aq-datasheet.pdf)