Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Download PDF

Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

YJL2302B

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)

YJL2302B from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limit is ±10 V, with threshold VGS(th) 0.55 V min to 1.1 V max at ID=250 µA.
2	S	passive	Source; continuous drain current is 3.0 A at TA=25 °C and the body diode is rated 3.0 A continuous.
3	D	passive	Drain; drain-source voltage is rated 20 V, with pulsed drain current of 14 A.

Key specifications

Parameter	Value
Manufacturer	Yangzhou Yangjie Elec Tech
Package	SOT-23(TO-236)
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	20			V	VGS= 0V, ID=250μA	2
Zero Gate Voltage Drain Current	IDSS			1	μA	VDS=20V,VGS=0V,TC=25℃	2
Gate-Body Leakage Current	IGSS	-100		100	nA	VGS= ±10V, VDS=0V	2
Gate Threshold Voltage	VGS(th)	0.55	0.78	1.1	V	VDS= VGS, ID=250μA	2
Static Drain-Source On-Resistance	RDS(ON)		40	52	mΩ	VGS= 4.5V, ID=3.0A	2
Static Drain-Source On-Resistance	RDS(ON)		55	80	mΩ	VGS= 2.5V, ID=2.0A	2
Diode Forward Voltage	VSD			1.2	V	IS=3.0A,VGS=0V	2
Maximum Body-Diode Continuous Current	IS			3	A		2
Drain-Source Voltage	VDS			20	V	TA=25℃	1
Gate-Source Voltage	VGS	-10		10	V	TA=25℃	1
Drain Current	ID			3	A	TA=25℃ @ Steady State	1
Drain Current	ID			2.4	A	TA=70℃ @ Steady State	1
Pulsed Drain Current	IDM			14	A	TA=25℃	1
Total Power Dissipation	PD			0.7	W	TA=25℃	1
Junction and Storage Temperature Range	TJ ,TSTG	-55		150	℃		1
Thermal Resistance Junction-to-Ambient	RθJA			178	℃/ W	Steady State; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch	1
Input Capacitance	Ciss		280		pF	VDS=10V,VGS=0V,f=1MHZ	2
Output Capacitance	Coss		46		pF	VDS=10V,VGS=0V,f=1MHZ	2
Reverse Transfer Capacitance	Crss		29		pF	VDS=10V,VGS=0V,f=1MHZ	2
Total Gate Charge	Qg		2.9		nC	VGS=4.5V,VDS=10V,ID=3.0A	2
Gate Source Charge	Qgs		0.4		nC	VGS=4.5V,VDS=10V,ID=3.0A	2
Gate Drain Charge	Qgd		0.6		nC	VGS=4.5V,VDS=10V,ID=3.0A	2
Turn-on Delay Time	tD(on)		13		ns	VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω	2
Turn-on Rise Time	tr		54		ns	VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω	2
Turn-off Delay Time	tD(off)		18		ns	VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω	2
Turn-off Fall Time	tf		11		ns	VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω	2

CAD (KiCad official)

Symbol: YJL2302B
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
3D model files: yjl2302b-etched.step / yjl2302b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjl2302b.step / yjl2302b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 3dfe9c6c1b585699, retrieved 2026-10-22, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF