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YJL2301F
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJL2301F
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)
YJL2301F from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with VGS rated ±10V maximum and threshold VGS(th) of -0.4V to -1.0V at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET, with body-diode continuous current IS of -2A maximum. |
| 3 | D | passive | Drain of the P-channel MOSFET, with VDS rated -20V maximum and ID of -2A continuous (-8A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -20 | V | 1 | |||
| Gate-source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current | ID | -2 | A | TA=25℃ @ Steady State | 1 | ||
| Drain Current | ID | -1.6 | A | TA=70℃ @ Steady State | 1 | ||
| Pulsed Drain Current | IDM | -8 | A | 1 | |||
| Total Power Dissipation | PD | 0.7 | W | TA=25℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 178 | ℃/ W | Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (footnote B) | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS= 0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 90 | 120 | mΩ | VGS= -4.5V, ID=-1.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 115 | 150 | mΩ | VGS= -2.5V, ID=-1.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 165 | 250 | mΩ | VGS= -1.8V, ID=-1.5A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS=-2A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | 2 |
CAD (KiCad official)
- Symbol:
YJL2301F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
yjl2301f-etched.step/yjl2301f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjl2301f.step/yjl2301f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
853c6a1d1b137c40, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).