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YJL05N04C

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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJL05N04C

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)

YJL05N04C from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V max and a threshold VGS(th) of 1 V min to 2.5 V max at ID=250 µA.
2 S passive Source; body-diode anode, with maximum continuous body-diode current IS of 5 A.
3 D passive Drain; VDS rated 40 V max with continuous ID of 5 A at TA=25℃ and pulsed IDM of 30 A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 40 V TA=25℃ 1
Gate-source Voltage VGS -20 20 V TA=25℃ 1
Drain Current ID 5 A TA=25℃ 1
Drain Current ID 3 A TA=100℃ 1
Pulsed Drain Current IDM 30 A TA=25℃ 1
Total Power Dissipation PD 1.2 W TA=25℃ 1
Total Power Dissipation PD 0.5 W TA=100℃ 1
Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 80 100 ℃/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=40V, VGS=0V, Tj=150℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 25 33 mΩ VGS=10V, ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 38 50 mΩ VGS=4.5V, ID=3A 2
Diode Forward Voltage VSD 0.9 1.2 V IS=5A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 5 A 2
Gate resistance RG 2.2 Ω f=1MHz 2
Input Capacitance Ciss 390 pF VDS=20V, VGS=0V, f=1MHz 2
Output Capacitance Coss 50 pF VDS=20V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 40 pF VDS=20V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 11 nC VGS=10V, VDS=20V, ID=5A 2
Gate-Source Charge Qgs 3 nC VGS=10V, VDS=20V, ID=5A 2
Gate-Drain Charge Qgd 3 nC VGS=10V, VDS=20V, ID=5A 2
Reverse Recovery Charge Qrr 19 nC IF=5A, di/dt=100A/us 2
Reverse Recovery Time trr 26 ns IF=5A, di/dt=100A/us 2
Turn-on Delay Time tD(on) 6 ns VGS=10V, VDD=20V, ID=5A, RGEN=2.2Ω 2
Turn-on Rise Time tr 20 ns VGS=10V, VDD=20V, ID=5A, RGEN=2.2Ω 2
Turn-off Delay Time tD(off) 12 ns VGS=10V, VDD=20V, ID=5A, RGEN=2.2Ω 2
Turn-off fall Time tf 2 ns VGS=10V, VDD=20V, ID=5A, RGEN=2.2Ω 2

CAD (KiCad official)

  • Symbol: YJL05N04C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: yjl05n04c-etched.step / yjl05n04c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjl05n04c.step / yjl05n04c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (8 pp, sha256 2960a0aac11c8100, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF