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YJL03N06C

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Yangzhou Yangjie Elec Tech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJL03N06C

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)

YJL03N06C from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 0.9 V min to 2 V max at ID=250 µA.
2 S passive Source; the body diode anode is connected here, with continuous body-diode current up to 3 A.
3 D passive Drain; drain-source voltage rated 60 V and continuous drain current 3 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 60 V TA=25℃ 1
Gate-source Voltage VGS -20 20 V TA=25℃ 1
Drain Current ID 3 A TA=25℃ 1
Drain Current ID 1.9 A TA=100℃ 1
Pulsed Drain Current IDM 20 A TA=25℃ 1
Total Power Dissipation PD 1.2 W TA=25℃ 1
Total Power Dissipation PD 0.45 W TA=100℃ 1
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 85 105 ℃/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=60V, VGS=0V, Tj=150℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.9 1.3 2 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 60 80 mΩ VGS=10V, ID=3A 2
Static Drain-Source On-Resistance RDS(ON) 70 95 mΩ VGS=4.5V, ID=2A 2
Diode Forward Voltage VSD 0.85 1.2 V IS=3A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 3 A 2
Gate resistance RG 2.8 Ω f=1MHz, Open drain 2
Input Capacitance Ciss 400 pF VDS=30V, VGS=0V, f=1MHz 2
Output Capacitance Coss 28 pF VDS=30V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 23 pF VDS=30V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 8.8 nC VGS=10V, VDS=30V, ID=3A 2
Gate-Source Charge Qgs 1 nC VGS=10V, VDS=30V, ID=3A 2
Gate-Drain Charge Qgd 2.5 nC VGS=10V, VDS=30V, ID=3A 2
Reverse Recovery Charge Qrr 24 nC IF=3A, di/dt=500A/us 2
Reverse Recovery Time trr 12 ns IF=3A, di/dt=500A/us 2
Turn-on Delay Time tD(on) 4.5 ns VGS=10V, VDD=30V, ID=3A, RGEN=2.3Ω 2
Turn-on Rise Time tr 10 ns VGS=10V, VDD=30V, ID=3A, RGEN=2.3Ω 2
Turn-off Delay Time tD(off) 12.5 ns VGS=10V, VDD=30V, ID=3A, RGEN=2.3Ω 2
Turn-off fall Time tf 1.5 ns VGS=10V, VDD=30V, ID=3A, RGEN=2.3Ω 2

CAD (KiCad official)

  • Symbol: YJL03N06C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: yjl03n06c-etched.step / yjl03n06c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjl03n06c.step / yjl03n06c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (8 pp, sha256 0e2b5dec768bea5d, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF