component
YJL02N10A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJL02N10A
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23(TO-236)
YJL02N10A from Yangzhou Yangjie Elec Tech, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V, threshold 1.1 to 3.0 V at ID=250 µA, RDS(ON) specified at VGS=10 V and 4.5 V. |
| 2 | S | passive | Source; body diode continuous current up to 2.0 A, junction and storage temperature -55 to +150 °C. |
| 3 | D | passive | Drain; VDS up to 100 V, continuous drain current 2.0 A at TA=25 °C, pulsed 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23(TO-236) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Drain current | ID | 2 | A | TA=25℃ | 1 | ||
| Drain current | ID | 1.6 | A | TA=70℃ | 1 | ||
| Pulsed drain current | IDM | 8 | A | 1 | |||
| Total power dissipation | PD | 1.2 | W | @ TA=25℃ | 1 | ||
| Junction and storage temperature range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction-to-ambient | RθJA | 105 | ℃/ W | Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch (note B) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS1 | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate-Body Leakage Current | IGSS2 | -50 | 50 | nA | VGS= ±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.8 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 250 | 280 | mΩ | VGS= 10V, ID=2.0A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 260 | 310 | mΩ | VGS= 4.5V, ID=2.0A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=2A,VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 |
CAD (KiCad official)
- Symbol:
YJL02N10A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
yjl02n10a-etched.step/yjl02n10a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjl02n10a.step/yjl02n10a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
b5df4b39e27a3525, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).