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Contents

README

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YJJ09N03A

Yangzhou Yangjie Elec Tech · MOSFETs · SOT-23-6L

YJJ09N03A from Yangzhou Yangjie Elec Tech, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain; shorted externally with pins 2, 5 and 6, rated VDS 30V and ID 9A at TA=25℃.
2 D passive Drain; shorted externally with pins 1, 5 and 6, rated VDS 30V and ID 9A at TA=25℃.
3 G input Gate; gate-source voltage limit is ±20V, with threshold VGS(th) 1V min to 2.5V max at ID=250μA.
4 S passive Source; body diode continuous current IS is 9A, and RDS(ON) is below 15mohm at VGS=10V.
5 D passive Drain; shorted externally with pins 1, 2 and 6, rated VDS 30V and pulsed drain current IDM 50A.
6 D passive Drain; shorted externally with pins 1, 2 and 5, rated VDS 30V and pulsed drain current IDM 50A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance (VGS=10V) RDS(ON) 9 15 mΩ VGS=10V, ID=6.0A 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 12 18 mΩ VGS= 4.5V, ID=5.0A 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Diode Forward Voltage VSD 1.2 V IS=9A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 9 A 2
Input Capacitance Ciss 1015 pF VDS=15V,VGS=0V,f=1MHZ 2
Output Capacitance Coss 201 pF VDS=15V,VGS=0V,f=1MHZ 2
Reverse Transfer Capacitance Crss 164 pF VDS=15V,VGS=0V,f=1MHZ 2
Total Gate Charge Qg 23.6 nC VGS=10V,VDS=15V,ID=20A 2
Gate-Source Charge Qgs 3.9 nC VGS=10V,VDS=15V,ID=20A 2
Gate-Drain Charge Qgd 7 nC VGS=10V,VDS=15V,ID=20A 2
Reverse Recovery Charge Qrr 0.1 IF=15A, di/dt=100A/us 2
Reverse Recovery Time trr 7 ns IF=15A, di/dt=100A/us 2
Turn-on Delay Time tD(on) 7 ns VGS=10V,VDD=20V, ID=2A, RGEN=3Ω 2
Turn-on Rise Time tr 19 ns VGS=10V,VDD=20V, ID=2A, RGEN=3Ω 2
Turn-off Delay Time tD(off) 24 ns VGS=10V,VDD=20V, ID=2A, RGEN=3Ω 2
Turn-off Fall Time tf 24 ns VGS=10V,VDD=20V, ID=2A, RGEN=3Ω 2
Drain-source Voltage VDS 30 V 1
Gate-source Voltage VGS -20 20 V 1
Drain Current ID 9 A TA=25℃ 1
Drain Current ID 7.2 A TA=70℃ 1
Pulsed Drain Current IDM 50 A 1
Total Power Dissipation PD 1.25 W TA=25℃ 1
Thermal Resistance Junction-to-Ambient RθJA 100 ℃/ W 1
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2

CAD (KiCad official)

  • Symbol: YJJ09N03A
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: yjj09n03a-etched.step / yjj09n03a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjj09n03a.step / yjj09n03a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256 79025accbc2df377, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF