component
YJD60N04A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownYJD60N04A
Yangzhou Yangjie Elec Tech · MOSFETs · TO-252
YJD60N04A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, VGS rated ±20 V with threshold of 1.0 V min to 2.5 V max at 250 µA. |
| 2 | D | passive | Drain, the shortened centre lead which is common with the exposed drain tab; VDS 40 V max and ID 60 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous current IS is 60 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 40 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Drain current | ID | 60 | A | TC=25℃ | 1 | ||
| Drain current | ID | 42 | A | TC=100℃ | 1 | ||
| Pulsed drain current | IDM | 200 | A | 1 | |||
| Total power dissipation | PD | 54 | W | TC=25℃ | 1 | ||
| Total power dissipation | PD | 27 | W | TC=100℃ | 1 | ||
| Single pulse avalanche energy | EAS | 120 | mJ | Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω (note B) | 1 | ||
| Thermal resistance junction-to-case | RθJC | 2.8 | ℃/W | Junction-to-case (note C) | 1 | ||
| Junction and storage temperature range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=40V,VGS=0V, TJ=25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 5 | μA | VDS=40V,VGS=0V, TJ=55℃ | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static drain-source on-resistance | RDS(ON) | 5.4 | 7 | mΩ | VGS= 10V, ID=20A | 2 | |
| Static drain-source on-resistance | RDS(ON) | 6.8 | 9.5 | mΩ | VGS= 4.5V, ID=10A | 2 | |
| Diode forward voltage | VSD | 0.8 | 1.2 | V | IS=20A,VGS=0V | 2 | |
| Maximum body-diode continuous current | IS | 60 | A | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
CAD (KiCad official)
- Symbol:
YJD60N04A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yjd60n04a-etched.step/yjd60n04a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjd60n04a.step/yjd60n04a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
3d06f28ea6d6f77f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).