# YJD60N02A

**Yangzhou Yangjie Elec Tech** · MOSFETs · TO-252

YJD60N02A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V absolute maximum, with VGS(th) 0.4 to 1.0 V at ID=250 µA. |
| 2 | D | passive | Drain (center lead stub and exposed metal tab used for heat dissipation); VDS 20 V max, ID 60 A at TC=25℃, pulsed IDM 210 A. |
| 3 | S | passive | Source; body-diode continuous current IS 60 A max, forward voltage VSD 1.2 V max at IS=20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-source Voltage | VGS | -10 |  | 10 | V |  | 1 |
| Drain Current | ID |  |  | 60 | A | TC=25℃ | 1 |
| Drain Current | ID |  |  | 42 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 210 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 35 | W | TC=25℃ | 1 |
| Total Power Dissipation | PD |  |  | 18 | W | TC=100℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 195 | mJ | Tj=25℃, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω (note B) | 1 |
| Thermal Resistance Junction-to-Case | RθJC |  |  | 4.3 | ℃/ W | note C: RθJC guaranteed by design | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS= 0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS= ±10V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.62 | 1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4.5 | 6 | mΩ | VGS= 4.5V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 5.5 | 8.8 | mΩ | VGS= 2.5V, ID=15A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8 | 14 | mΩ | VGS= 1.8V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | IS=20A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 60 | A |  | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |

## CAD (KiCad official)

- Symbol: `YJD60N02A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yjd60n02a-etched.step` / `yjd60n02a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjd60n02a.step` / `yjd60n02a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916129884745728) (6 pp, sha256 `95a7aa0a782a8b8a`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjd60n02a-datasheet.pdf)