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README.md yjd50n03a: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 19d ago
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YJD50N03A

Yangzhou Yangjie Elec Tech · MOSFETs · TO-252

YJD50N03A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V with threshold VGS(th) of 1.0 to 2.5 V at ID=250 µA.
2 D passive Drain, shown on the heat-dissipating tab and the short center stub; VDS 30 V max and ID 50 A at TC=25 °C.
3 S passive Source; body-diode continuous current IS is 50 A max.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current (TJ=25℃) IDSS 1 μA VDS=30V,VGS=0V, TJ=25℃ 2
Zero Gate Voltage Drain Current (TJ=55℃) IDSS 5 μA VDS=30V,VGS=0V, TJ=55℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 6.5 9 mΩ VGS= 10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 8.6 11 mΩ VGS= 4.5V, ID=15A 2
Diode Forward Voltage VSD 0.85 1.2 V IS=15A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 50 A 2
Drain-source Voltage VDS 30 V TA=25℃ unless otherwise noted 1
Gate-source Voltage VGS -20 20 V TA=25℃ unless otherwise noted; printed as ±20 V 1
Drain Current ID 50 A TC=25℃ 1
Drain Current ID 35 A TC=100℃ 1
Pulsed Drain Current IDM 150 A Pulse test: width ≤300us, duty cycle ≤2% (note A) 1
Total Power Dissipation PD 34 W TC=25℃ 1
Total Power Dissipation PD 17 W TC=100℃ 1
Single Pulse Avalanche Energy EAS 80 mJ Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω (note B) 1
Junction and Storage Temperature Range TJ ,TSTG -55 175 ℃ 1
Thermal Resistance Junction-to-Case RθJC 4.4 ℃/W Note C: guaranteed by design 1

CAD (KiCad official)

  • Symbol: YJD50N03A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: yjd50n03a-etched.step / yjd50n03a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjd50n03a.step / yjd50n03a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 94d6f40e4b0e2a93, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF