component
YJD50N03A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 24d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 19d ago |
| yjd50n03a-etched.glb | 17d ago |
| yjd50n03a-etched.step | 17d ago |
| yjd50n03a-hero.glb | 17d ago |
| yjd50n03a-hero.overlay.json | 17d ago |
| yjd50n03a.glb | 24d ago |
| yjd50n03a.kicad_mod | 24d ago |
| yjd50n03a.kicad_sym | 24d ago |
| yjd50n03a.lbr | 24d ago |
| yjd50n03a.step | 24d ago |
YJD50N03A
Yangzhou Yangjie Elec Tech · MOSFETs · TO-252
YJD50N03A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with threshold VGS(th) of 1.0 to 2.5 V at ID=250 µA. |
| 2 | D | passive | Drain, shown on the heat-dissipating tab and the short center stub; VDS 30 V max and ID 50 A at TC=25 °C. |
| 3 | S | passive | Source; body-diode continuous current IS is 50 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (TJ=25℃) | IDSS | 1 | μA | VDS=30V,VGS=0V, TJ=25℃ | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | 5 | μA | VDS=30V,VGS=0V, TJ=55℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 6.5 | 9 | mΩ | VGS= 10V, ID=15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.6 | 11 | mΩ | VGS= 4.5V, ID=15A | 2 | |
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | IS=15A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 50 | A | 2 | |||
| Drain-source Voltage | VDS | 30 | V | TA=25℃ unless otherwise noted | 1 | ||
| Gate-source Voltage | VGS | -20 | 20 | V | TA=25℃ unless otherwise noted; printed as ±20 V | 1 | |
| Drain Current | ID | 50 | A | TC=25℃ | 1 | ||
| Drain Current | ID | 35 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | Pulse test: width ≤300us, duty cycle ≤2% (note A) | 1 | ||
| Total Power Dissipation | PD | 34 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 17 | W | TC=100℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω (note B) | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Case | RθJC | 4.4 | ℃/W | Note C: guaranteed by design | 1 |
CAD (KiCad official)
- Symbol:
YJD50N03A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yjd50n03a-etched.step/yjd50n03a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjd50n03a.step/yjd50n03a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
94d6f40e4b0e2a93, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).