component
YJD50N03A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
yjd50n03a: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+262−1
README.md+26@@ -21,6 +21,32 @@ YJD50N03A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descripti | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS= 0V, ID=250μA | 2 |+| Zero Gate Voltage Drain Current (TJ=25℃) | IDSS | | | 1 | μA | VDS=30V,VGS=0V, TJ=25℃ | 2 |+| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | | | 5 | μA | VDS=30V,VGS=0V, TJ=55℃ | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 6.5 | 9 | mΩ | VGS= 10V, ID=15A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 8.6 | 11 | mΩ | VGS= 4.5V, ID=15A | 2 |+| Diode Forward Voltage | VSD | | 0.85 | 1.2 | V | IS=15A,VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 50 | A | | 2 |+| Drain-source Voltage | VDS | | | 30 | V | TA=25℃ unless otherwise noted | 1 |+| Gate-source Voltage | VGS | -20 | | 20 | V | TA=25℃ unless otherwise noted; printed as ±20 V | 1 |+| Drain Current | ID | | | 50 | A | TC=25℃ | 1 |+| Drain Current | ID | | | 35 | A | TC=100℃ | 1 |+| Pulsed Drain Current | IDM | | | 150 | A | Pulse test: width ≤300us, duty cycle ≤2% (note A) | 1 |+| Total Power Dissipation | PD | | | 34 | W | TC=25℃ | 1 |+| Total Power Dissipation | PD | | | 17 | W | TC=100℃ | 1 |+| Single Pulse Avalanche Energy | EAS | | | 80 | mJ | Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω (note B) | 1 |+| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 175 | ℃ | | 1 |+| Thermal Resistance Junction-to-Case | RθJC | | | 4.4 | ℃/W | Note C: guaranteed by design | 1 |+ ## CAD (KiCad official) - Symbol: `YJD50N03A`
page.json+236−1@@ -149,6 +149,241 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "94d6f40e4b0e2a93",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS= 0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (TJ=25℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30V,VGS=0V, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (TJ=55℃)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=30V,VGS=0V, TJ=55℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS= ±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.5,+ "max": 2.5,+ "conditions": "VDS= VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.5,+ "max": 9,+ "conditions": "VGS= 10V, ID=15A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 8.6,+ "max": 11,+ "conditions": "VGS= 4.5V, ID=15A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.85,+ "max": 1.2,+ "conditions": "IS=15A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TA=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TA=25℃ unless otherwise noted; printed as ±20 V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "Pulse test: width ≤300us, duty cycle ≤2% (note A)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 34,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 17,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω (note B)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 4.4,+ "conditions": "Note C: guaranteed by design",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +425,4 @@ "visibility": { "public": true }-}+}