# YJD20N06A

**Yangzhou Yangjie Elec Tech** · MOSFETs · TO-252

YJD20N06A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of 1.0 V min to 2.5 V max at ID=250μA. |
| 2 | D | passive | Drain (middle lead, electrically common with the exposed drain tab); VDS rated 60 V and continuous ID of 20 A at TC=25℃. |
| 3 | S | passive | Source; carries up to 20 A continuous current, and the body diode continuous current IS is 20 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current | ID |  |  | 20 | A | TC=25℃ | 1 |
| Drain Current | ID |  |  | 14 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 60 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 34 | W | TC=25℃ | 1 |
| Total Power Dissipation | PD |  |  | 17 | W | TC=100℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 20 | mJ | Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω | 1 |
| Thermal Resistance Junction-to-Case | RθJC |  |  | 4.4 | ℃/ W |  | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 |  | 175 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS= 0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V,VGS=0V; TJ=25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | μA | VDS=60V,VGS=0V; TJ=55℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS= ±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 34 | 43 | mΩ | VGS= 10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 36 | 47 | mΩ | VGS= 4.5V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  | 0.8 | 1.2 | V | IS=10A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 20 | A |  | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper |  | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |

## CAD (KiCad official)

- Symbol: `YJD20N06A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yjd20n06a-etched.step` / `yjd20n06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjd20n06a.step` / `yjd20n06a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588905152103526400) (6 pp, sha256 `77788d9dfc05cf4a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjd20n06a-datasheet.pdf)