component
YJD18GP10AQ
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Yangzhou Yangjie Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJD18GP10AQ
Yangzhou Yangjie Elec Tech · MOSFETs · TO-252
YJD18GP10AQ from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with threshold of -1.0 to -2.5 V at ID=-250 µA. |
| 2 | D | passive | Drain, the center stub lead and the exposed mounting tab; VDS max -100 V and continuous ID -18 A at TC=25 °C. |
| 3 | S | passive | Source; body-diode continuous current IS is -18 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS= 0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-100V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (150℃) | IDSS | -100 | μA | VDS=-100V, VGS=0V, Tj=150℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 83 | 110 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 95 | 120 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Diode Forward Voltage | VSD | -1.3 | V | IS=-10A, VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | -18 | A | 2 | |||
| Drain-source Voltage | VDS | -100 | V | TA=25℃ | 1 | ||
| Gate-source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current | ID | -18 | A | TC=25℃ | 1 | ||
| Drain Current | ID | -12 | A | Tc=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -72 | A | TA=25℃; repetitive rating, pulse width limited by max. junction temperature | 1 | ||
| Avalanche energy | EAS | 36 | mJ | TJ=25℃, VDD=-50V, VG=-10V, RG=25Ω, L=0.5mH, ID=-12A | 1 | ||
| Total Power Dissipation | PD | 72 | W | Tc=25℃ | 1 | ||
| Total Power Dissipation | PD | 29 | W | Tc=100℃ | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 40 | 50 | ℃/W | Steady-State, 1in2 FR-4 2oz Cu, still air, TA=25℃ | 1 | |
| Thermal Resistance Junction-to-Case | RθJC | 1.35 | 1.7 | ℃/W | Steady-State | 1 | |
| Gate resistance | RG | 10 | Ω | f=1MHz, Open drain | 2 | ||
| Input Capacitance | Ciss | 1051 | pF | VDS=-50V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 119 | pF | VDS=-50V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS=-50V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 20.1 | nC | VGS=-10V, VDS=-50V, ID=-5A | 2 | ||
| Gate-Source Charge | Qgs | 3.9 | nC | VGS=-10V, VDS=-50V, ID=-5A | 2 | ||
| Gate-Drain Charge | Qgd | 4.3 | nC | VGS=-10V, VDS=-50V, ID=-5A | 2 | ||
| Reverse Recovery Charge | Qrr | 140 | ns | IF=-5A, di/dt=100A/us | 2 | ||
| Reverse Recovery Time | trr | 70 | ns | IF=-5A, di/dt=100A/us | 2 | ||
| Turn-on Delay Time | tD(on) | 10 | ns | VGS=-10V, VDD=-50V, RL=2.5Ω, RGEN=6Ω | 2 | ||
| Turn-on Rise Time | tr | 30 | ns | VGS=-10V, VDD=-50V, RL=2.5Ω, RGEN=6Ω | 2 | ||
| Turn-off Delay Time | tD(off) | 77 | ns | VGS=-10V, VDD=-50V, RL=2.5Ω, RGEN=6Ω | 2 | ||
| Turn-off fall Time | tf | 81 | ns | VGS=-10V, VDD=-50V, RL=2.5Ω, RGEN=6Ω | 2 |
CAD (KiCad official)
- Symbol:
YJD18GP10AQ - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yjd18gp10aq-etched.step/yjd18gp10aq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjd18gp10aq.step/yjd18gp10aq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (7 pp, sha256
d43547f50c0d0ab6, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).